Conductive layer buried-type substrate, method of forming the conductive layer buried-type substrate, and method of fabricating semiconductor device using the conductive layer buried-type substrate

A method of fabricating a semiconductor device including forming a conductive layer buried-type substrate, the method comprising:

• forming a hydrogen ion implantation layer by implanting hydrogen ions under a first surface of a single crystal semiconductor substrate;
• forming a conductive layer comprising a metal layer on the first surface of the single crystal semiconductor substrate;
• forming an adhesion promotion layer on an upper surface of the conductive layer to improve an adhesion between the conductive layer and a silicon oxidation layer, which is formed after the conductive layer is formed;
• forming the silicon oxidation layer on an upper surface of the adhesion promotion layer;
• forming a preliminary conductive layer buried-type substrate by bonding the silicon oxidation layer to a supporting substrate;
• and
• forming a conductive layer buried-type substrate comprising a single crystal semiconductor layer on the conductive layer by dividing the single crystal semiconductor substrate along the hydrogen ion implantation layer.