Capacitor structure and semiconductor device including the same

A capacitor structure comprising:

• an electrode structure including a first electrode and a second electrode on the first electrode;
• a dielectric film disposed between the first electrode and the second electrode and including a first material having a first oxidation number;
• a first interfacial insulating film disposed between the first electrode and the dielectric film and including a second material having a second oxidation number;
• and
• a first inserted insulating film disposed between the first electrode and the first interfacial insulating film,
• wherein each of the dielectric film and the first interfacial insulating film includes a material having a rutile phase, and
• wherein the first oxidation number is equal to the second oxidation number.

A semiconductor device comprising:

• a substrate including a first source/drain area, a second source/drain area, and a word line trench defined between the first source/drain area and the second source/drain area;
• a buried word line disposed in the word line trench;
• a bit line connected to the first source/drain area;
• and
• a capacitor structure connected to the second source/drain area,
• wherein the capacitor structure includes:
• an electrode structure including a lower electrode and an upper electrode on the lower electrode;
• and
• a dielectric film structure disposed between the lower electrode and the upper electrode,
• wherein the dielectric film structure includes:
• a dielectric film including a rutile phase material and having a first thickness;
• an interfacial insulating film disposed between the lower electrode and the dielectric film and having a second thickness smaller than the first thickness;
• and
• an inserted insulating film disposed between the lower electrode and the interfacial insulating film, the inserted insulating film having a third thickness smaller than the second thickness.