H10B 12/312
With a bit line higher than the capacitor
Official title: {with a bit line higher than the capacitor}
H10B12/312 (With a bit line higher than the capacitor) appears on 532 US grants and 518 published applications in this corpus.
Search patents in H10B- Granted patents
- 532
- Published applications
- 518
- Assignees
- 77
- Inventors
- 711
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 3 | 0 |
| 1999 | 9 | 0 |
| 2000 | 18 | 0 |
| 2001 | 33 | 17 |
| 2002 | 41 | 42 |
| 2003 | 46 | 49 |
| 2004 | 52 | 50 |
| 2005 | 29 | 40 |
| 2006 | 29 | 35 |
| 2007 | 24 | 17 |
| 2008 | 18 | 10 |
| 2009 | 16 | 10 |
| 2010 | 11 | 3 |
| 2011 | 11 | 11 |
| 2012 | 4 | 6 |
| 2013 | 11 | 3 |
| 2014 | 6 | 4 |
| 2015 | 2 | 4 |
| 2016 | 6 | 4 |
| 2017 | 5 | 6 |
| 2018 | 9 | 7 |
| 2019 | 6 | 13 |
| 2020 | 11 | 19 |
| 2021 | 19 | 28 |
| 2022 | 22 | 24 |
| 2023 | 19 | 46 |
| 2024 | 21 | 24 |
| 2025 | 29 | 20 |
| 2026 | 21 | 26 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Memory devices having vertical transistors and fabricating methods thereof15 Sep 2026US 12,740,051 B2Yangtze Memory Technologies Co., Ltd.
- Semiconductor devices having designed bit lines and fabricating methods thereof8 Sep 2026US 12,733,152 B2Yangtze Memory Technologies Co., Ltd.
- Semiconductor device with oxide semiconductor layer for memory cells1 Sep 2026US 12,727,147 B2Kioxia Corporation
- Memory structure for low temperature operation25 Aug 2026US 12,720,726 B2Intel Corporation
- Semiconductor device11 Aug 2026US 12,707,630 B2Samsung Electronics Co., Ltd.
- Memory device including 2-transistor memory cell structure for neural network1 Oct 2026US 2026/0301778 A1Micron Technology, Inc.
- Memory device including channel structure1 Oct 2026US 2026/0304740 A1SK hynix Inc.
- Memory device and method of forming the same1 Oct 2026US 2026/0304741 A1Winbond Electronics Corp.
- Memory device with back-gate transistor17 Sep 2026US 2026/0282323 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory devices having vertical transistors and fabricating methods thereof17 Sep 2026US 2026/0282330 A1Yangtze Memory Technologies Co., Ltd.
Most cited
By later US patents
- Method to reduce bit line capacitance in cub drams579US 6,472,266 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2002
- Films doped with carbon for use in integrated circuit technology244US 6,462,371 B1Micron Technology, Inc. · 2002
- Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell146US 6,165,834 AMicron Technology, Inc. · 2000
- Semiconductor device having an SOI substrate139US 6,252,281 B1Kabushiki Kaisha Toshiba · 2001
- Mixed metal nitride and boride barrier layers129US 6,445,023 B1Micron Technology, Inc. · 2002