Memory device and method of forming the same

A method of forming a memory device, comprising:

• forming a plurality of bit-line structures on a substrate in parallel, wherein the plurality of bit-line structures extend along a first direction;
• respectively forming a plurality of conductive lines between the plurality of bit-line structures to contact a plurality of active areas in the substrate;
• forming a sacrificial layer on the plurality of conductive lines;
• patterning the plurality of bit-line structures, the sacrificial layer, and the plurality of conductive lines to form a plurality of openings arranged along a second direction, wherein the plurality of openings at least cut off the plurality of conductive lines to form a plurality of conductive pads;
• forming a dielectric layer in the plurality of openings;
• removing the sacrificial layer to expose the plurality of conductive pads;
• and
• respectively forming a plurality of conductive plugs on the plurality of conductive pads, aside the plurality of bit-line structures, and electrically connected to the plurality of active areas,
• wherein the plurality of conductive pads are vertically disposed between the plurality of conductive plugs and the plurality of active areas and embedded in the substrate, wherein a perimeter of one of the plurality of conductive plugs falls entirely within a perimeter of a corresponding conductive pad in a top view, and a top surface of the plurality of conductive pads is level with a top surface of the plurality of active areas.