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US 6,462,371 B1Granted
Films doped with carbon for use in integrated circuit technology
AssigneeMicron Technology, Inc.
InventorsRonald A. Weimer, John T. Moore
Life of this patent
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Abstract
The present invention pertains to films comprising silicon and oxygen that are doped with carbon and the use of the films in integrated circuit technology, such as capacitor constructions, DRAM constructions, semiconductive material assemblies, etching processes, and methods for forming capacitors, DRAMs and semiconductive material assemblies.
Claims8
A semiconductive assembly comprising:
- a semiconductive substrate;
- a wordline over the semiconductive substrate;
- and
- an etch stop layer over the wordline, wherein the etch stop layer comprises silicon, from about 5% to about 75% by weight oxygen, and from about 2% to about 20% by weight carbon.
1 more element
Dependencies are inferred from the claim text.