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US 12,727,147 B2Granted
Semiconductor device with oxide semiconductor layer for memory cells
AssigneeKioxia Corporation
InventorTakao Kosaka
Life of this patent
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Abstract
According to one embodiment, a semiconductor device includes a conductive layer, an oxide semiconductor layer provided penetrating the conductive layer in a first direction, and a first insulating film provided between the conductive layer and the oxide semiconductor layer in a second direction that intersects the first direction. The first insulating film comprises boron nitride.
Claims21
A semiconductor device, comprising:
- a conductive layer;
- an oxide semiconductor layer penetrating the conductive layer in a first direction;
- and
- a first insulating film between the conductive layer and the oxide semiconductor layer in a second direction that intersects the first direction, wherein
- the first insulating film comprises boron nitride, and
- the first insulating film is hexagonal crystal boron nitride.
3 more elements
A semiconductor device, comprising:
- a conductive layer;
- an oxide semiconductor layer penetrating the conductive layer in a first direction;
- a first insulating film between the conductive layer and the oxide semiconductor layer in a second direction that intersects the first direction;
- and
- a second insulating film between the conductive layer and the first insulating film in the second direction, wherein
- the first insulating film comprises boron nitride, and
- the second insulating film comprises silicon, aluminum, oxygen, and nitrogen.
4 more elements
A semiconductor device, comprising:
- a conductive layer:
- an oxide semiconductor layer penetrating the conductive layer in a first direction;
- a first insulating film between the conductive layer and the oxide semiconductor layer in a second direction that intersects the first direction;
- and
- a second insulating film between the first insulating film and the oxide semiconductor layer in the second direction, wherein
- the first insulating film comprises boron nitride, and
- the second insulating film comprises silicon, aluminum, oxygen, and nitrogen.
4 more elements
A semiconductor device, comprising:
- a conductive layer having a first surface and a second surface on a side opposite to that of the first surface in a first direction;
- an oxide semiconductor layer penetrating the conductive layer in the first direction;
- a first insulating film between the conductive layer and the oxide semiconductor layer in a second direction that intersects the first direction;
- and
- a first conductive film on at least one of the first surface and the second surface of the conductive layer, wherein
- the first conductive film is a hydrogen absorbing material.
3 more elements
A semiconductor device, comprising:
- a conductive layer;
- an oxide semiconductor column penetrating the conductive layer in a first direction;
- a first insulating film between the conductive layer and the oxide semiconductor column in a second direction that intersects the first direction;
- and
- a capacitor connected to an end of the oxide semiconductor column, wherein
- the first insulating film is a hexagonal crystal boron nitride.
3 more elements
Dependencies are inferred from the claim text.