Semiconductor device

Abstract

A semiconductor device includes a lower structure; a plurality of lower electrodes on the lower structure; an upper electrode on the plurality of lower electrodes; a dielectric layer between the plurality of lower electrodes and the upper electrode, and including a ferroelectric layer or an antiferroelectric layer; and a plurality of interfacial layers between the plurality of lower electrodes and the dielectric layer, wherein the plurality of interfacial layers include a first layer contacting the plurality of lower electrodes, and including a first metal element, a second metal element, different from the first metal element, and elemental nitrogen; and a second layer between the first layer and the dielectric layer, and including the first metal element, the second metal element, and elemental oxygen, and wherein a concentration of the second metal element in the first layer is lower than a concentration of the second metal element in the second layer.

Dependencies are inferred from the claim text.