Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell

A method of forming a capacitor comprising:

• forming a first capacitor electrode over a substrate;
• forming a high K oxygen containing capacitor dielectric layer over the first capacitor electrode;
• annealing the high K capacitor dielectric layer at a substrate temperature of at least about 200.degree. C. in an activated oxygen atmosphere to produced at least in part from oxygen subjected to remote microwave plasma, and the annealing atmosphere being void of plasma;
• and forming a second capacitor electrode over the high K oxygen containing capacitor dielectric layer.

A method of forming a DRAM cell comprising:

• forming a first capacitor electrode over a substrate;
• forming a high K oxygen containing capacitor dielectric layer over the first capacitor electrode;
• annealing the high K capacitor dielectric layer at a substrate temperature of at least about 200.degree. C. and at a pressure of greater than 1 atmosphere in an atmosphere comprising ozone and which is void of plasma, effective to densify the high K capacitor dielectric layer;
• forming a second capacitor electrode over the high K oxygen containing capacitor dielectric layer;
• and
• providing a field effect transistor having a pair of source/drain regions, one of the source/drain regions being provided in electrical connection with the first capacitor electrode, the other of the source/drain regions being provided in electrical connection with a bit line.

A method of forming a DRAM cell comprising:

• forming a first capacitor electrode over a substrate;
• forming a high K oxygen containing capacitor dielectric layer over the first capacitor electrode;
• annealing the high K capacitor dielectric layer at a substrate temperature of at least about 300.degree. C. in an activated oxygen atmosphere produced at least in part from oxygen subjected to remote microwave plasma, and the annealing atmosphere being void of plasma;
• forming a second capacitor electrode over the high K oxygen containing capacitor dielectric layer;
• and
• providing a field effect transistor having a pair of source/drain regions, one of the source/drain regions being provided in electrical connection with the first capacitor electrode, the other of the source/drain regions being provided in electrical connection with a bit line.

A method of forming a capacitor comprising:

• forming a first capacitor electrode over a substrate;
• forming a high K oxygen containing capacitor dielectric layer over the first capacitor electrode;
• annealing the high K capacitor dielectric layer at a substrate temperature of at least about 200.degree. C. and at a pressure of greater than 1 atmosphere in an atmosphere comprising ozone and which is void of plasma, effective to reduce leakage current of the high K capacitor dielectric layer;
• and
• forming a second capacitor electrode over the high K oxygen containing capacitor dielectric layer.

A method of forming a DRAM cell comprising:

• forming a first capacitor electrode over a substrate;
• forming a high K oxygen containing capacitor dielectric layer over the first capacitor electrode;
• annealing the high K capacitor dielectric layer at a substrate temperature of at least about 200.degree. C. and at a pressure of greater than 1 atmosphere in an atmosphere comprising ozone and which is void of plasma, effective to reduce leakage current of the high K capacitor dielectric layer;
• forming a second capacitor electrode over the high K oxygen containing capacitor dielectric layer;
• and
• providing a field effect transistor having a pair of source/drain regions, one of the source/drain regions being provided in electrical connection with the first capacitor electrode, the other of the source/drain regions being provided in electrical connection with a bit line.