H10B 12/37
The capacitor being at least partially in a trench in the substrate
Official title: {the capacitor being at least partially in a trench in the substrate}
H10B12/37 (The capacitor being at least partially in a trench in the substrate) appears on 1,016 US grants and 704 published applications in this corpus.
Search patents in H10B- Granted patents
- 1,016
- Published applications
- 704
- Assignees
- 148
- Inventors
- 1,403
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 3 | 0 |
| 1987 | 10 | 0 |
| 1988 | 13 | 0 |
| 1989 | 24 | 0 |
| 1990 | 37 | 0 |
| 1991 | 33 | 0 |
| 1992 | 25 | 0 |
| 1993 | 25 | 0 |
| 1994 | 30 | 0 |
| 1995 | 30 | 0 |
| 1996 | 19 | 0 |
| 1997 | 20 | 0 |
| 1998 | 26 | 0 |
| 1999 | 30 | 0 |
| 2000 | 25 | 0 |
| 2001 | 33 | 14 |
| 2002 | 29 | 21 |
| 2003 | 37 | 35 |
| 2004 | 35 | 53 |
| 2005 | 34 | 64 |
| 2006 | 41 | 35 |
| 2007 | 27 | 34 |
| 2008 | 36 | 20 |
| 2009 | 17 | 13 |
| 2010 | 16 | 12 |
| 2011 | 12 | 6 |
| 2012 | 10 | 18 |
| 2013 | 7 | 16 |
| 2014 | 19 | 21 |
| 2015 | 22 | 33 |
| 2016 | 34 | 25 |
| 2017 | 26 | 21 |
| 2018 | 14 | 18 |
| 2019 | 24 | 25 |
| 2020 | 22 | 32 |
| 2021 | 42 | 42 |
| 2022 | 27 | 37 |
| 2023 | 22 | 35 |
| 2024 | 33 | 32 |
| 2025 | 26 | 28 |
| 2026 | 17 | 14 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Memory device including capacitor contacts having different materials and method for preparing the same6 Oct 2026US 12,757,374 B2Nanya Technology Corporation
- Semiconductor memory device and method for fabricating same15 Sep 2026US 12,740,050 B2Hangzhou HFC Semiconductor Co.
- Memory device including capacitor contacts having different materials and method for preparing the same25 Aug 2026US 12,720,723 B2Nanya Technology Corporation
- Structure with frontside and backside DRAMs21 Jul 2026US 12,690,186 B2International Business Machines Corporation
- Package architecture with memory chips having different process regions14 Jul 2026US 12,685,222 B2Intel Corporation
- Memory Circuitry And Methods Used In Forming Memory Circuitry1 Oct 2026US 2026/0304756 A1Micron Technology, Inc.
- Semiconductor device including insulating element and method of making16 Jul 2026US 2026/0206211 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including integrated capacitor and vertical channel transistor and methods of forming the same2 Jul 2026US 2026/0190326 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure including a capacitor structure and method of manufacturing the same11 Jun 2026US 2026/0164645 A1Nanya Technology Corporation
- Semiconductor structure including a capacitor structure and method of manufacturing the same11 Jun 2026US 2026/0164647 A1Nanya Technology Corporation
Most cited
By later US patents
- SOI stacked DRAM logic395US 6,544,837 B1International Business Machines Corporation · 2003
- Method and structure for buried circuits and devices377US 7,141,853 B2International Business Machines Corporation · 2006
- Method and structure for buried circuits and devices308US 6,759,282 B2International Business Machines Corporation · 2004
- Method of fabricating a buried reservoir capacitor structure for high-density dynamic random access memory (DRAM) circuits266US 5,943,581 AVanguard International Semiconductor Corporation · 1999
- High-density DRAM structure on soi259US 5,528,062 AInternational Business Machines Corporation · 1996