H10B 12/373
The capacitor extending under or around the transistor
Official title: {the capacitor extending under or around the transistor}
H10B12/373 (The capacitor extending under or around the transistor) appears on 219 US grants and 164 published applications in this corpus.
Search patents in H10B- Granted patents
- 219
- Published applications
- 164
- Assignees
- 57
- Inventors
- 366
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 2 | 0 |
| 1988 | 2 | 0 |
| 1989 | 2 | 0 |
| 1990 | 3 | 0 |
| 1991 | 4 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 4 | 0 |
| 1995 | 3 | 0 |
| 1996 | 3 | 0 |
| 1997 | 5 | 0 |
| 1998 | 8 | 0 |
| 1999 | 12 | 0 |
| 2000 | 7 | 0 |
| 2001 | 13 | 2 |
| 2002 | 7 | 8 |
| 2003 | 9 | 10 |
| 2004 | 9 | 11 |
| 2005 | 7 | 15 |
| 2006 | 14 | 7 |
| 2007 | 7 | 8 |
| 2008 | 8 | 2 |
| 2009 | 2 | 1 |
| 2010 | 1 | 1 |
| 2011 | 1 | 1 |
| 2012 | 0 | 1 |
| 2013 | 2 | 3 |
| 2014 | 1 | 3 |
| 2015 | 4 | 12 |
| 2016 | 13 | 11 |
| 2017 | 10 | 9 |
| 2018 | 6 | 7 |
| 2019 | 7 | 6 |
| 2020 | 5 | 5 |
| 2021 | 11 | 11 |
| 2022 | 5 | 5 |
| 2023 | 3 | 7 |
| 2024 | 6 | 8 |
| 2025 | 6 | 3 |
| 2026 | 5 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Semiconductor device including insulating element and method of making10 Mar 2026US 12,575,086 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device having word line surrounding gate structure and manufacturing method thereof10 Mar 2026US 12,575,088 B2Nanya Technology Corporation
- Semiconductor structure and method of manufacturing the same13 Jan 2026US 12,526,984 B2Nanya Technology Corporation
- Semiconductor device including insulating element and method of making16 Jul 2026US 2026/0206211 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure including a capacitor structure and method of manufacturing the same11 Jun 2026US 2026/0164645 A1Nanya Technology Corporation
- Semiconductor structure including a capacitor structure and method of manufacturing the same11 Jun 2026US 2026/0164647 A1Nanya Technology Corporation
- Semiconductor structure including a capacitor structure and method of manufacturing the same11 Jun 2026US 2026/0164648 A1Nanya Technology Corporation
- Semiconductor structure and method of manufacturing the same5 Mar 2026US 2026/0068135 A1Nanya Technology Corporation
Most cited
By later US patents
- SOI stacked DRAM logic395US 6,544,837 B1International Business Machines Corporation · 2003
- Method and structure for buried circuits and devices377US 7,141,853 B2International Business Machines Corporation · 2006
- Method and structure for buried circuits and devices308US 6,759,282 B2International Business Machines Corporation · 2004
- Method of fabricating a buried reservoir capacitor structure for high-density dynamic random access memory (DRAM) circuits266US 5,943,581 AVanguard International Semiconductor Corporation · 1999
- Fabrication process and structure for a contacted-body silicon-on-insulator dynamic random access memory160US 5,606,188 AInternational Business Machines Corporation · 1997