Back to results
US 2026/0164645 A1Published application
Semiconductor structure including a capacitor structure and method of manufacturing the same
AssigneeNanya Technology Corporation
InventorYING-CHENG CHUANG
Life of this patent
Estimating the term…
Abstract
A semiconductor structure and a method of manufacturing the same are provided. The semiconductor structure includes a base structure, a patterned circuit structure, a capacitor structure and a vertical transistor. The patterned circuit structure is disposed over the base structure. The capacitor structure is disposed over the patterned circuit structure. The vertical transistor is disposed over the capacitor structure.
Claims9
A semiconductor structure, comprising:
- a base structure;
- a patterned circuit structure disposed over the base structure, and including a metal-oxide-semiconductor (MOS) structure;
- an intermediate structure disposed over the patterned circuit structure;
- a capacitor structure embedded in the intermediate structure and disposed over the patterned circuit structure;
- an upper structure disposed on the intermediate structure;
- and
- a vertical transistor embedded in the upper structure.
4 more elements
Dependencies are inferred from the claim text.