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US 12,526,984 B2Granted
Semiconductor structure and method of manufacturing the same
AssigneeNanya Technology Corporation
InventorSzu-Yao Chang
Life of this patent
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Abstract
A semiconductor structure and a method of manufacturing a semiconductor structure are provided. The semiconductor structure includes a substrate, an upper structure, a vertical transistor an electrical pad. The upper structure is disposed on the substrate and defines a hole. The vertical transistor is disposed in the hole. The electrical pad is disposed in the hole and on the vertical transistor. A top surface of the electrical pad is substantially aligned with a topmost surface of the upper structure.
Claims20
A semiconductor structure, comprising:
- a substrate comprising a conductive material indented on a top surface of the substrate;
- an upper structure disposed on the top surface of the substrate and defining a hole to expose a portion of a top surface of the conductive material;
- a vertical transistor disposed in the hole and in contact with the top surface of the conductive material;
- and
- an electrical pad disposed in the hole and on the vertical transistor, wherein a top surface of the electrical pad is substantially aligned with a topmost surface of the upper structure.
2 more elements
A semiconductor structure, comprising:
- a substrate comprising a capacitor and a conductive material surrounded by the capacitor;
- a vertical transistor disposed on the substrate, and electrically connected to the capacitor via the conductive material, wherein the vertical transistor is coaxially aligned with the conductive material, wherein a width of the vertical transistor is less than a width of the conductive material, such that a width of the capacitor is larger than the width of the vertical transistor;
- an electrical pad disposed on the vertical transistor, wherein the electrical pad has a consistent thickness;
- and
- a bit line electrically connected to the electrical pad.
2 more elements
Dependencies are inferred from the claim text.