Semiconductor device including insulating element and method of making
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChin-Shan Wang, Shun-Yi Lee
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Abstract
A method of making a semiconductor device includes forming a first transistor on a substrate, wherein forming the first transistor comprises forming a first source/drain electrode in the substrate. The method further includes forming a second transistor on the substrate, wherein forming the second transistor comprises forming a second source/drain electrode. The method further includes forming an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode, and the insulating layer extends above a top-most surface of the substrate.
Claims20
A method of making a semiconductor device comprising:
- forming a first transistor on a substrate, wherein forming the first transistor comprises forming a first source/drain electrode in the substrate;
- forming a second transistor on the substrate, wherein forming the second transistor comprises forming a second source/drain electrode;
- and
- forming an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode, and the insulating layer extends above a top-most surface of the substrate.
A method of fabricating a semiconductor device, the method comprising:
- forming a dummy structure over a substrate;
- forming conductive features in the substrate;
- removing the dummy structure and a portion of the substrate beneath the dummy structure to form a trench, wherein removing the portion of the substrate exposes a portion of at least one of the conductive features;
- and
- filling the trench with a dielectric material.
A method of making a semiconductor device comprising:
- forming a first transistor on a substrate, wherein forming the first transistor comprises forming a first source/drain electrode in the substrate;
- forming a second transistor on the substrate, wherein forming the second transistor comprises forming a second source/drain electrode;
- forming a dummy structure over the substrate;
- and
- forming an insulating layer extending into the substrate, wherein forming the insulating layer comprises
- removing the dummy structure and a portion of the substrate beneath the dummy structure to form a trench exposing at least one of the first source/drain electrode or the second source/drain electrode;
- and
- filling the trench with a dielectric material.
Dependencies are inferred from the claim text.