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US 2026/0164648 A1Published application
Semiconductor structure including a capacitor structure and method of manufacturing the same
AssigneeNanya Technology Corporation
InventorYING-CHENG CHUANG
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Abstract
A semiconductor structure and a method of manufacturing the same are provided. The semiconductor structure includes a base structure, a patterned circuit structure, a capacitor structure and a vertical transistor. The patterned circuit structure is disposed over the base structure. The capacitor structure is disposed over the patterned circuit structure. The vertical transistor is disposed over the capacitor structure.
Claims15
A semiconductor structure, comprising:
- a base structure;
- a patterned circuit structure disposed over the base structure;
- a capacitor structure disposed over the patterned circuit structure;
- a vertical transistor disposed over the capacitor structure, wherein the vertical transistor includes a main material and a periphery insulation layer, the main material includes indium-gallium-zinc oxide (IGZO), the periphery insulation layer surrounds the main material and includes an insulation material;
- an electrical pad disposed on the vertical transistor;
- and
- an upper conductive layer disposed between the electrical pad and the vertical transistor, wherein the upper conductive layer includes a transparent conductive oxide (TCO) material.
4 more elements
A method of manufacturing a semiconductor structure, comprising:
- forming a patterned circuit structure on a base structure;
- forming a capacitor structure over the patterned circuit structure;
- and
- forming a vertical transistor over the capacitor structure.
1 more element
Dependencies are inferred from the claim text.