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US 12,575,088 B2Granted
Memory device having word line surrounding gate structure and manufacturing method thereof
AssigneeNanya Technology Corporation
InventorSzu-Yao Chang
Life of this patent
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Abstract
The present application provides a memory device having a word line (WL) surrounding a gate structure and a manufacturing method of the memory device. The memory device includes a first dielectric surrounding a capacitor; a second dielectric disposed over the first dielectric and the capacitor; a word line embedded in the second dielectric; and a gate structure disposed over the capacitor and extending through the second dielectric, wherein the gate structure is at least partially surrounded by the word line.
Claims13
A memory device, comprising:
- a first dielectric surrounding a capacitor;
- a second dielectric disposed over the first dielectric and the capacitor;
- a word line embedded in the second dielectric;
- and
- a gate structure disposed over the capacitor and extending through the second dielectric,
- wherein the gate structure is at least partially surrounded by the word line;
- wherein a width of the capacitor is greater than a width of the gate structure;
- wherein a thickness of the first dielectric is substantially greater than a thickness of the second dielectric;
- wherein the thickness of the second dielectric is in a range of 90 nm to 110 nm.
6 more elements
Dependencies are inferred from the claim text.