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US 12,690,186 B2Granted
Structure with frontside and backside DRAMs
AssigneeInternational Business Machines Corporation
InventorsMin Gyu Sung, Kangguo Cheng, Ruilong Xie, Chanro Park, Julien Frougier
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Abstract
A semiconductor structure having a high cell density is provided in which a frontside dynamic access memory (DRAM) is located on a frontside of a semiconductor substrate, and a backside DRAM is located on a backside of the semiconductor substrate. Peripheral transistors can be located on the frontside of the semiconductor substrate and at a same level as frontside transistors of the frontside DRAM.
Claims20
A semiconductor structure comprising:
- a semiconductor substrate having a frontside and a backside;
- a frontside dynamic random access memory (DRAM) comprising a plurality of frontside transistors and a plurality of frontside capacitors located on the frontside of the semiconductor substrate;
- a backside DRAM comprising a plurality of backside transistors and a plurality of backside capacitors located on the backside of the semiconductor substrate;
- and
- a plurality of peripheral transistors located on the frontside of the semiconductor substrate and at a same device level as the plurality of frontside transistors, wherein the plurality of peripheral transistors are electrically connected to both the frontside DRAM and the backside DRAM.
2 more elements
Dependencies are inferred from the claim text.