H10B 12/377
Having a storage electrode extension located over the transistor
Official title: {having a storage electrode extension located over the transistor}
H10B12/377 (Having a storage electrode extension located over the transistor) appears on 110 US grants and 58 published applications in this corpus.
Search patents in H10B- Granted patents
- 110
- Published applications
- 58
- Assignees
- 44
- Inventors
- 141
- Latest grant
- 21 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 4 | 0 |
| 1991 | 5 | 0 |
| 1992 | 5 | 0 |
| 1993 | 9 | 0 |
| 1994 | 4 | 0 |
| 1995 | 5 | 0 |
| 1996 | 2 | 0 |
| 1997 | 5 | 0 |
| 1998 | 5 | 0 |
| 1999 | 4 | 0 |
| 2000 | 4 | 0 |
| 2001 | 4 | 3 |
| 2002 | 4 | 3 |
| 2003 | 5 | 5 |
| 2004 | 7 | 3 |
| 2005 | 2 | 4 |
| 2006 | 1 | 5 |
| 2007 | 6 | 2 |
| 2008 | 2 | 3 |
| 2009 | 1 | 1 |
| 2010 | 3 | 2 |
| 2011 | 0 | 0 |
| 2012 | 1 | 0 |
| 2013 | 0 | 2 |
| 2014 | 1 | 1 |
| 2015 | 4 | 5 |
| 2016 | 1 | 0 |
| 2017 | 0 | 0 |
| 2018 | 1 | 0 |
| 2019 | 1 | 0 |
| 2020 | 0 | 1 |
| 2021 | 2 | 6 |
| 2022 | 4 | 3 |
| 2023 | 1 | 2 |
| 2024 | 1 | 2 |
| 2025 | 2 | 3 |
| 2026 | 3 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Semiconductor device including integrated capacitor and vertical channel transistor and methods of forming the same2 Jul 2026US 2026/0190326 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Laser annealing system and method of fabricating a semiconductor device using the same16 Apr 2026US 2026/0102855 A1Eo Technics Co., Ltd.
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- Vertical gate-all-around memory device having stacked capacitor structure3 Jul 2025US 2025/0220888 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Capacitor, electronic device including the same, and method of manufacturing the same3 Jul 2025US 2025/0220933 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Silicon on insulator (SOI) dram cell structure and process154US 5,811,283 AUnited Microelectronics Corp. · 1998
- Sidewall capacitor DRAM cell119US 4,958,318 A1990
- Semiconductor memory device with stacked capacitor structure and the manufacturing method thereof52US 4,951,175 AKabushiki Kaisha Toshiba · 1990
- Multi-bit dynamic random access memory cell storage46US 5,640,350 A1997
- DRAM cell having a capacitor structure fabricated partially in a cavity and method for operating same44US 6,744,676 B2Monolithic System Technology, Inc. · 2004