Capacitor, electronic device including the same, and method of manufacturing the same

A method of manufacturing a capacitor, the method comprising:

• providing a thin-film electrode layer;
• epitaxially growing an interlayer on a surface of the thin-film electrode layer;
• disposing a dielectric layer on the interlayer such that a thickness of the dielectric layer is greater than a thickness of the interlayer;
• and
• disposing another thin-film electrode layer on the dielectric layer,
• wherein the interlayer has a crystal with a structure of the same type as and a different composition from a crystal structure of at least one of the thin-film electrode layer or the dielectric layer that contact the interlayer,
• the interlayer comprises at least one of a first anionized layer, a second anionized layer, or a first neutral layer,
• the first anionized layer includes at least one of a monovalent cation, a divalent cation, or a trivalent cation that has an atomic weight of 20 or more,
• the second anionized layer includes a monovalent cation, and
• the first neutral layer includes a plurality of trivalent cations.

A capacitor including:

• first and second thin-film electrode layers, at least one of the first and second thin-film electrode layers including a conductive perovskite-type crystal structure;
• a dielectric layer between the first and second thin-film layers, the dielectric layer including a dielectric perovskite-type crystal structure;
• and
• an interlayer connecting the dielectric perovskite-type crystal structure and the conductive perovskite-type crystal structure, wherein a thickness of the interlayer is less than a thickness of the dielectric layer,
• wherein, one of the dielectric perovskite-type crystal structure or the conductive perovskite-type crystal structure includes a ternary oxide including an A cation located at a cuboctahedral site and a B cation located at a octahedral site, and
• wherein the interlayer includes a first cation located at the cuboctahedral site and a second cation located at the octahedral site, and
• wherein the first cation has a lower valency than the A cation at a corresponding A-cation site of the ternary oxide and/or the second cation has a lower valency than the B cation at a corresponding B-cation site of the ternary oxide.