US 5,811,283 AGranted

Silicon on insulator (SOI) dram cell structure and process

AssigneeUnited Microelectronics Corp.

InventorShih-wei Sun

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Abstract

A silicon on insulator (SOI) DRAM has a layer of buried oxide covered by a thin layer of crystalline silicon on the surface of a bulk silicon substrate. Field oxide regions are formed extending through the thin crystalline silicon surface layer and into contact with the buried oxide layer. Gate oxide layers, gate electrodes and source/drain regions for the transfer FETs of the DRAM are formed in and on the thin crystalline silicon surface layer in the active regions between the field oxide regions. A trench is opened through one of the source/drain regions of each of the transfer FETs. A layer of doped polysilicon is provided to line the trenches and is patterned to form at least a part of the bottom electrodes of the charge storage capacitors for the DRAM. The bottom electrodes are covered with a thin dielectric layer and an upper electrode of doped polysilicon is provided. Preferably, the trench for the bottom capacitor electrode extends through the buried oxide layer and may extend into the bulk silicon.

Claims6

Dependent claims

A method of making a memory comprising:

providing a substrate having a surface layer of silicon and a buried insulating layer under the surface layer of silicon;
forming field isolation structures in and on the surface layer of silicon, thereby defining active device regions on the surface layer of silicon;
forming a layer of oxide on the active device regions of the substrate;
forming gate electrodes on the layer of oxide;
forming first and second source/drain regions in the surface layer of silicon;
depositing a layer of insulating material over the gate electrodes;
forming a mask over the layer of insulating material having openings over the first source/drain regions;
etching trenches through the layer of insulating material, the surface layer of silicon and into the buried insulating layer;
depositing a first layer of polysilicon to line the trenches and then patterning the first layer of polysilicon to define, at least in part, lower capacitor electrodes;
providing a dielectric layer over the lower capacitor electrode;
and
depositing a second layer of polysilicon and forming upper capacitor electrodes.

9 more elements

Dependencies are inferred from the claim text.

Facts

Application: 08/740,148Filed 22 Oct 1996
Granted: 22 Sep 1998
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10B 12/038
Making the capacitor or connections thereto: the capacitor being in a trench in the substrate
H10B 12/377
The capacitor being at least partially in a trench in the substrate: having a storage electrode extension located over the transistor
H10D 86/01
Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless…
H10D 86/201
Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless…