H10B 12/39
The capacitor and the transistor being in a same trench
Official title: {the capacitor and the transistor being in a same trench}
H10B12/39 (The capacitor and the transistor being in a same trench) appears on 421 US grants and 279 published applications in this corpus.
Search patents in H10B- Granted patents
- 421
- Published applications
- 279
- Assignees
- 69
- Inventors
- 526
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 6 | 0 |
| 1988 | 6 | 0 |
| 1989 | 9 | 0 |
| 1990 | 18 | 0 |
| 1991 | 21 | 0 |
| 1992 | 12 | 0 |
| 1993 | 18 | 0 |
| 1994 | 12 | 0 |
| 1995 | 5 | 0 |
| 1996 | 7 | 0 |
| 1997 | 3 | 0 |
| 1998 | 7 | 0 |
| 1999 | 10 | 0 |
| 2000 | 18 | 0 |
| 2001 | 14 | 11 |
| 2002 | 24 | 19 |
| 2003 | 23 | 17 |
| 2004 | 26 | 34 |
| 2005 | 20 | 27 |
| 2006 | 29 | 18 |
| 2007 | 7 | 16 |
| 2008 | 15 | 16 |
| 2009 | 10 | 5 |
| 2010 | 8 | 4 |
| 2011 | 7 | 2 |
| 2012 | 2 | 0 |
| 2013 | 3 | 5 |
| 2014 | 3 | 3 |
| 2015 | 4 | 4 |
| 2016 | 4 | 1 |
| 2017 | 2 | 0 |
| 2018 | 3 | 6 |
| 2019 | 6 | 8 |
| 2020 | 7 | 7 |
| 2021 | 5 | 8 |
| 2022 | 6 | 12 |
| 2023 | 7 | 19 |
| 2024 | 10 | 10 |
| 2025 | 9 | 16 |
| 2026 | 11 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Memory devices having vertical transistors and fabricating methods thereof15 Sep 2026US 12,740,051 B2Yangtze Memory Technologies Co., Ltd.
- Package architecture with memory chips having different process regions15 Sep 2026US 12,740,480 B2Intel Corporation
- Semiconductor device and method of manufacturing the same7 Jul 2026US 12,677,409 B2Kioxia Corporation
- Memory devices having vertical transistors and fabricating methods thereof23 Jun 2026US 12,666,597 B2Yangtze Memory Technologies Co., Ltd.
- Memory devices having vertical transistors and fabricating methods thereof16 Jun 2026US 12,660,168 B2Yangtze Memory Technologies Co., Ltd.
- Microelectronic devices including vertical channel access devices, and related methods and memory devices24 Sep 2026US 2026/0293108 A1Micron Technology, Inc.
- Memory devices having vertical transistors and fabricating methods thereof17 Sep 2026US 2026/0282330 A1Yangtze Memory Technologies Co., Ltd.
- Memory devices having vertical transistors and fabricating methods thereof10 Sep 2026US 2026/0271274 A1Yangtze Memory Technologies Co., Ltd.
- Array Of Capacitors, An Array Of Memory Cells, Method Used In Forming An Array Of Memory Cells, Methods Used In Forming An Array Of Capacitors, And Methods Used In Forming A Plurality Of Horizontally-Spaced Conductive Lines27 Aug 2026US 2026/0255683 A1Micron Technology, Inc.
- Memory cell array and memory device including thereof20 Aug 2026US 2026/0247602 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Process for manufacturing vertical dynamic random access memories409US 5,106,775 AHitachi, Ltd. · 1992
- Method of making memory cell with vertical transistor and buried word and body lines239US 5,909,618 AMicron Technology, Inc. · 1999
- Vertical DRAM cell and method232US 4,673,962 ATexas Instruments Incorporated · 1987
- Dram with a vertical capacitor and transistor168US 5,006,909 AMotorola, Inc. · 1991
- Method of fabricating cross-point lightly-doped drain-source trench transistor168US 5,021,355 AInternational Business Machines Corporation · 1991