Semiconductor device and method of manufacturing the same
AssigneeKioxia Corporation
InventorsTatsuki Kikuchi, Keiko Sakuma, Shosuke Fujii
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a semiconductor device includes a first insulating layer, a gate electrode layer provided on the first insulating layer, a second insulating layer provided on the gate electrode layer, an oxide semiconductor layer provided along the second insulating layer, the gate electrode layer and the first insulating layer, a gate insulating layer provided along the second insulating layer, the gate electrode layer and the first insulating layer, and surrounding a side surface of the oxide semiconductor layer, and a first hydrogen barrier film surrounding the oxide semiconductor layer and the gate insulating layer.
Claims17
A semiconductor device comprising:
- a first electrode;
- a first insulating layer provided above the first electrode;
- a gate electrode layer provided on the first insulating layer;
- a second insulating layer provided on the gate electrode layer;
- an oxide semiconductor layer provided along the second insulating layer, the gate electrode layer and the first insulating layer;
- a gate insulating layer provided along the second insulating layer, the gate electrode layer and the first insulating layer, and surrounding a side surface of the oxide semiconductor layer;
- and
- a first hydrogen barrier film surrounding the oxide semiconductor layer and the gate insulating layer, wherein the first insulating layer, the gate electrode layer and the second insulating layer are interposed between the first hydrogen barrier film and a layer including the oxide semiconductor layer and the gate insulating layer, wherein a portion of the first hydrogen barrier film is provided between the first electrode and the first insulating layer.
Dependencies are inferred from the claim text.