H10B 12/36
The transistor being a finfet
Official title: {the transistor being a FinFET}
H10B12/36 (The transistor being a finfet) appears on 608 US grants and 660 published applications in this corpus.
Search patents in H10B- Granted patents
- 608
- Published applications
- 660
- Assignees
- 77
- Inventors
- 762
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 4 | 0 |
| 2002 | 1 | 3 |
| 2003 | 2 | 0 |
| 2004 | 0 | 6 |
| 2005 | 2 | 10 |
| 2006 | 5 | 15 |
| 2007 | 11 | 27 |
| 2008 | 14 | 21 |
| 2009 | 13 | 28 |
| 2010 | 30 | 20 |
| 2011 | 24 | 24 |
| 2012 | 24 | 38 |
| 2013 | 31 | 29 |
| 2014 | 35 | 26 |
| 2015 | 33 | 43 |
| 2016 | 42 | 31 |
| 2017 | 51 | 32 |
| 2018 | 30 | 37 |
| 2019 | 42 | 40 |
| 2020 | 34 | 42 |
| 2021 | 34 | 39 |
| 2022 | 41 | 27 |
| 2023 | 32 | 43 |
| 2024 | 29 | 39 |
| 2025 | 23 | 23 |
| 2026 | 19 | 17 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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Most cited
By later US patents
- Method and structure for a 1T-RAM bit cell and macro263US 7,425,740 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2008
- Semiconductor memory having both volatile and non-volatile functionality and method of operating232US 7,847,338 B22010
- Semiconductor memory having both volatile and non-volatile functionality and method of operating217US 8,159,878 B2Zeno Semiconductor, Inc. · 2012
- Semiconductor memory having both volatile and non-volatile functionality and method of operating215US 8,294,193 B2Zeno Semiconductor, Inc. · 2012
- Semiconductor memory having both volatile and non-volatile functionality and method of operating214US 8,059,459 B2Zeno Semiconductor, Inc. · 2011