Thin-sheet FinFET device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMark van Dal, Martin Christopher Holland, Matthias Passlack
Life of this patent
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Abstract
A semiconductor device includes a fin protruding upwardly from a substrate. The fin includes a first sidewall and an opposing second sidewall and a top surface extending between the first and second sidewalls. The semiconductor device also includes a two-dimensional material layer disposed on the first and second sidewalls of the fin without being disposed on the top surface of the fin, and a gate stack disposed on the fin. The gate stack contacts a channel region defined in the two-dimensional material layer. The two-dimensional material layer includes a flat portion extending laterally away from the fin.
Claims20
A semiconductor device, comprising:
- a fin protruding upwardly from a substrate, the fin including a first sidewall and an opposing second sidewall and a top surface extending between the first and second sidewalls;
- a two-dimensional material layer disposed on the first and second sidewalls of the fin without being disposed on the top surface of the fin, wherein the two-dimensional material layer includes a flat portion extending laterally away from the fin, wherein the two-dimensional material layer includes a transition metal dichalcogenide;
- and
- a gate stack disposed on the fin, the gate stack contacting a channel region defined in the two-dimensional material layer.
A semiconductor device, comprising:
- a substrate;
- a dielectric isolation structure disposed on the substrate;
- a fin protruding through the dielectric isolation structure, wherein above a top surface of the dielectric isolation structure the fin includes a first sidewall and an opposing second sidewall and a top surface of the fin extending between the first and second sidewalls;
- a two-dimensional material layer, wherein in a cross-sectional view of the semiconductor device the two-dimensional material layer includes a first portion disposed on the first and second sidewalls of the fin and a second portion disposed on the top surface of the dielectric isolation structure, wherein in the cross-sectional view of the semiconductor device a portion of the top surface of the fin is free of direct contact with the two-dimensional material layer, and wherein the two-dimensional material layer includes a transition metal dichalcogenide;
- and
- a gate stack disposed on a channel region defined in the two-dimensional material layer.
A semiconductor device, comprising:
- a rib structure disposed on a substrate, the rib structure including a first sidewall and an opposing second sidewall and a top surface extending between the first and second sidewalls;
- a two-dimensional material layer disposed directly on the first and second sidewalls of the rib structure, wherein a first channel region and a first source/drain region are defined in the two-dimensional material layer disposed directly on the first sidewall and a second channel region and a second source/drain region are defined in the two-dimensional material layer disposed directly on the second sidewall, wherein the first and second channel regions are spaced apart, wherein the first and second source/drain regions are spaced apart, wherein the two-dimensional material layer includes a transition metal dichalcogenide;
- and
- a gate stack disposed on the rib structure, the gate stack including a gate dielectric layer and a gate electrode layer, the gate dielectric layer physically contacting the first and second channel regions of the two-dimensional material layer.
Dependencies are inferred from the claim text.