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US 2026/0223358 A1Published application
Semiconductor memory device
AssigneeSK hynix Inc.
InventorsSeung Wook RYU, Wan Sup SHIN
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Abstract
A semiconductor memory device includes: a conductive line stack including a plurality of first conductive lines that are stacked over a substrate in a direction perpendicular to a surface of the substrate; conductive pads extending laterally from edge portions of the first conductive lines, respectively; and contact plugs coupled to the conductive pads, respectively.
Claims15
A semiconductor memory device comprising:
- a conductive line stack including a plurality of first conductive lines stacked over a substrate in a direction perpendicular to a surface of the substrate;
- conductive pads extending laterally from edge portions of the plurality of first conductive lines, respectively;
- and
- contact plugs coupled to the conductive pads, respectively,
- wherein each of the plurality of first conductive lines includes a first sub-conductive line and a second sub-conductive line, and
- wherein each of the conductive pads is coupled to both the first sub-conductive line and the second sub-conductive line.
3 more elements
Dependencies are inferred from the claim text.