Semiconductor device with an electrically conductive structure having a capping layer sidewall directly contacting a contact structure and manufacturing method thereof

A manufacturing method of a semiconductor device, comprising:

• providing a semiconductor substrate having a cell region and a peripheral region, wherein the semiconductor substrate comprises at least one fin-shaped structure isolated by an insulation structure;
• forming a first stacked structure in the semiconductor substrate, wherein the first stacked structure is formed straddling the at least one fin-shaped structure, extends in a horizontal direction, and is formed in the cell region and the peripheral region, and the first stacked structure comprises:
• an electrically conductive layer comprising:
• a first portion located in the cell region;
• and
• a second portion located in the peripheral region;
• a capping layer disposed on the electrically conductive layer;
• and
• a dielectric capping layer disposed on the capping layer and the electrically conductive layer, wherein the dielectric capping layer contacts a top surface of the second portion of the electrically conductive layer;
• and
• forming a contact structure, wherein the contact structure directly contacts the electrically conductive layer and is electrically connected with the first stacked structure, a sidewall of the capping layer faces the contact structure in the horizontal direction, and the contact structure directly contacts the sidewall of the capping layer.

A semiconductor device, comprising:

• a semiconductor substrate having a cell region and a peripheral region, wherein the semiconductor substrate comprises at least one fin-shaped structure isolated by an insulation structure;
• a first stacked structure disposed in the semiconductor substrate, wherein the first stacked structure is disposed straddling the at least one fin-shaped structure, extends in a horizontal direction, and is disposed in the cell region and the peripheral region, and the first stacked structure comprises:
• an electrically conductive layer comprising:
• a first portion located in the cell region;
• and
• a second portion located in the peripheral region;
• a capping layer disposed on the electrically conductive layer;
• and
• a dielectric capping layer disposed on the capping layer and the electrically conductive layer, wherein the dielectric capping layer contacts a top surface of the second portion of the electrically conductive layer;
• and
• a contact structure directly contacting the electrically conductive layer and electrically connected with the first stacked structure,
• wherein the contact structure further contacts the capping layer directly, a first bottom surface of the contact structure is located between the capping layer and a second bottom surface of the contact structure in the horizontal direction, and the second bottom surface is lower than the first bottom surface in a vertical direction.