Semiconductor structure including polysilicon as bottom layer of bit line structure and method of manufacturing the same
AssigneeNanya Technology Corporation
InventorsMao-Ying Wang, Yu-Ting Lin
Life of this patent
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Abstract
A semiconductor structure includes: a substrate, including a plurality of fin structures; a dielectric layer, disposed over adjacent fin structures, wherein a top surface of the dielectric layer is a substantially planar surface; a bit line structure, disposed over the substrate and between adjacent fin structures, wherein the bit line structure includes a polysilicon layer contacting the top surface of the dielectric layer; and a spacer structure, surrounding the bit line structure, wherein the spacer structure contacts the top surface of the dielectric layer. A method of manufacturing the semiconductor structure is also provided.
Claims20
A method for manufacturing a semiconductor structure, comprising:
- providing a substrate, including a fin structure;
- forming a dielectric layer over the substrate, wherein a top surface of the dielectric layer is substantially planar;
- forming a polysilicon layer over the substrate and the dielectric layer;
- forming a bit line contact on the fin structure, wherein the bit line contact penetrates the polysilicon layer;
- forming a patterned mask over the bit line contact and the polysilicon layer;
- and
- patterning the bit line contact and the polysilicon layer, wherein a sidewall of the polysilicon layer is substantially straight and the top surface of the dielectric layer remains substantially planar after the patterning of the bit line contact and the polysilicon layer.
A method for manufacturing a semiconductor structure, comprising:
- providing a substrate, including a plurality of fin structures in an array region of the substrate;
- forming an oxide layer over the substrate, wherein the oxide layer covers the fin structures;
- forming a plurality of word line structures, alternately arranged with the plurality of fin structures, wherein a top surface of the oxide layer is substantially aligned with a top surface of the plurality of word line structures;
- forming a polysilicon layer over the substrate, the plurality of word line structures, the plurality of fin structures, and the oxide layer;
- forming a plurality of bit line contacts over the plurality of fin structures, wherein the bit line contacts penetrate the polysilicon layer;
- forming a patterned layer over the polysilicon layer;
- and
- patterning the polysilicon layer using the patterned layer as a mask, thereby forming a patterned polysilicon layer, wherein a sidewall of the patterned polysilicon layer is substantially straight;
- wherein a material of the bit line contacts includes polysilicon.
Dependencies are inferred from the claim text.