Back to results
US 2026/0282329 A1Published application
Semiconductor structure and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJhon Jhy LIAW
Life of this patent
Estimating the term…
Abstract
A method includes forming a transistor on a front-side of a substrate, the transistor comprising a channel region, a gate structure surrounding the channel region, and source/drain regions on opposite sides of the gate structure; forming a front-side contact on a first one of the source/drain regions of the transistor; forming a back-side contact on a second one of the source/drain regions of the transistor; forming a back-side capacitor on the back-side contact.
Claims20
A semiconductor structure, comprising:
- a substrate;
- a transistor on a front-side of the substrate, the transistor comprising a channel region, a gate structure surrounding the channel region, and source/drain regions on opposite sides of the gate structure;
- a front-side contact on a first one of the source/drain regions of the transistor;
- a back-side contact on a second one of the source/drain regions of the transistor;
- and
- a back-side capacitor on the back-side contact.
3 more elements
A semiconductor structure, comprising:
- a substrate;
- a transistor on a front side of the substrate;
- a dielectric layer on a back side of the substrate, the dielectric layer defining an opening;
- and
- a capacitor in the opening and electrically connected to the transistor, the capacitor comprising:
- a bottom electrode layer in the opening such that the bottom electrode layer has a lateral portion lining a bottom surface of the opening and a first vertical portion lining a sidewall of the opening;
- an insulator layer on the bottom electrode layer;
- and
- a top electrode layer on the insulator layer.
6 more elements
A semiconductor structure, comprising:
- a first transistor on a front-side of a substrate, the transistor comprising source/drain regions on the front-side of the substrate, a plurality of channel layers extending in a first direction between the source/drain regions, and a gate electrode extending along a second direction and surrounding each of the channel layers;
- a front-side bit line on a first one of the source/drain regions and extending across a lengthwise direction of the gate electrode from a top view;
- a first back-side capacitor on a second one of the source/drain regions;
- and
- a back-side source line on the first back-side capacitor.
2 more elements
Dependencies are inferred from the claim text.