H10B 51/00
Ferroelectric ram [feram] devices comprising ferroelectric memory transistors
Official title: Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
H10B51/00 (Ferroelectric ram [feram] devices comprising ferroelectric memory transistors) appears on 1,505 US grants and 2,224 published applications in this corpus.
Search patents in H10B- Granted patents
- 1,505
- Published applications
- 2,224
- Assignees
- 221
- Inventors
- 1,975
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 3 | 0 |
| 1998 | 3 | 0 |
| 1999 | 6 | 0 |
| 2000 | 13 | 0 |
| 2001 | 6 | 3 |
| 2002 | 6 | 13 |
| 2003 | 10 | 14 |
| 2004 | 14 | 15 |
| 2005 | 15 | 19 |
| 2006 | 10 | 9 |
| 2007 | 8 | 18 |
| 2008 | 4 | 9 |
| 2009 | 7 | 15 |
| 2010 | 13 | 15 |
| 2011 | 11 | 14 |
| 2012 | 12 | 4 |
| 2013 | 8 | 6 |
| 2014 | 5 | 10 |
| 2015 | 5 | 11 |
| 2016 | 11 | 34 |
| 2017 | 34 | 38 |
| 2018 | 34 | 63 |
| 2019 | 64 | 85 |
| 2020 | 81 | 128 |
| 2021 | 115 | 216 |
| 2022 | 163 | 303 |
| 2023 | 206 | 343 |
| 2024 | 245 | 354 |
| 2025 | 239 | 305 |
| 2026 | 151 | 180 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10B 51/30Ferroelectric ram [feram] devices comprising ferroelectric memory transistors: characterised by the memory1,057
- H10B 51/20Ferroelectric ram [feram] devices comprising ferroelectric memory transistors: characterised by the three-dimensional723
- H10B 51/10Ferroelectric ram [feram] devices comprising ferroelectric memory transistors: characterised by the top-view395
- H10B 51/40Ferroelectric ram [feram] devices comprising ferroelectric memory transistors: characterised by the peripheral200
- H10B 51/50Ferroelectric ram [feram] devices comprising ferroelectric memory transistors: characterised by the boundary88
Recent patents
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- 3D synapse device stack, 3D stackable synapse array using the 3D synapse device stacks and method of fabricating the stack29 Sep 2026US 12,751,008 B2Seoul National University R&Db Foundation
- Semiconductor device and method for manufacturing the same, and electronic system including semiconductor device29 Sep 2026US 12,751,015 B2Samsung Electronics Co., Ltd.
- Spacer film scheme form polarization improvement8 Oct 2026US 2026/0311724 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ternary content-addressable memory cells and methods for forming the same8 Oct 2026US 2026/0311760 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Fabrication Method for a Memory Structure Including High Density Three-Dimensional NOR Memory Strings of Junctionless Ferroelectric Storage Transistors8 Oct 2026US 2026/0311761 A1Sunrise Memory Corporation
- Semiconductor device including ferroelectric material film and method for fabricating a semiconductor device8 Oct 2026US 2026/0313906 A1Samsung Electronics Co., Ltd.
- Semiconductor memory device8 Oct 2026US 2026/0313907 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same285US 7,233,522 B2SanDisk 3D LLC · 2007
- Floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers106US 6,858,906 B2Samsung Electronics Co., Ltd. · 2005
- Method for forming metal-containing films using metal complexes with chelating O- and/or N-donor ligands101US 6,225,237 B1Micron Technology, Inc. · 2001
- Ferroelectric memory cell for an integrated circuit91US 10,600,808 B2NaMLab gGmbH · 2020
- Multilevel ferroelectric memory cell for an integrated circuit91US 9,830,969 B2NaMLab gGmbH · 2017