Semiconductor memory device

A semiconductor memory device, comprising:

• a substrate;
• a stack structure including word lines stacked in a first direction perpendicular to a top surface of the substrate and extending along a second direction parallel to the top surface of the substrate;
• bit lines disposed at a first side of the stack structure and spaced apart from each other in the second direction,
• source lines disposed at a second side of the stack structure and spaced apart from each other in the second direction,
• first channel patterns respectively disposed between adjacent word lines in the first direction and spaced apart from each other in the second direction;
• and
• data storage patterns respectively disposed between the first channel patterns and the word lines in the first direction.

A semiconductor memory device, comprising:

• a substrate;
• a stack structure including word lines and interlayer insulating patterns alternately stacked in a first direction perpendicular to a top surface of the substrate;
• first channel patterns respectively disposed between the interlayer insulating patterns and top surfaces of the word lines;
• second channel patterns respectively disposed between the interlayer insulating patterns and bottom surfaces of the word lines;
• data storage patterns respectively disposed between the first and second channel patterns and the word lines;
• a bit line disposed on a first side surface of the stack structure and connected to first end portions of the first channel patterns and the second channel patterns;
• and
• a source line disposed on a second side surface of the stack structure and connected to second end portions of the first channel patterns and the second channel patterns.