H10B 51/50
Ferroelectric ram [feram] devices comprising ferroelectric memory transistors: characterised by the boundary
Official title: characterised by the boundary region between the core and peripheral circuit regions
H10B51/50 (Ferroelectric ram [feram] devices comprising ferroelectric memory transistors: characterised by the boundary) appears on 88 US grants and 138 published applications in this corpus.
Search patents in H10B- Granted patents
- 88
- Published applications
- 138
- Assignees
- 20
- Inventors
- 163
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2018 | 1 | 0 |
| 2019 | 2 | 4 |
| 2020 | 3 | 4 |
| 2021 | 5 | 23 |
| 2022 | 12 | 26 |
| 2023 | 18 | 20 |
| 2024 | 23 | 33 |
| 2025 | 20 | 12 |
| 2026 | 4 | 16 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Non-volatile memory array with integrated memory and access transistors and method of making the same1 Sep 2026US 12,725,639 B2SanDisk Technologies LLC
- Memory device and method of forming the same19 May 2026US 12,635,141 B2Taiwan Semiconductor Manufacturing Company, Ltd.
- Memory device10 Mar 2026US 12,575,107 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device with word lines and contact landing3 Feb 2026US 12,543,316 B2Yangtze Memory Technologies Co., Ltd.
- Memory device and method of forming the same25 Nov 2025US 12,484,229 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Ferroelectric iii-nitride heterojunction devices20 Aug 2026US 2026/0247625 A1The Regents of the University of Michigan
- Cross-coupled differential fefet bit-cell circuit13 Aug 2026US 2026/0239624 A1
- Method of forming memory device21 May 2026US 2026/0143714 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory Array Contact Structures30 Apr 2026US 2026/0122905 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device and method of forming the same30 Apr 2026US 2026/0122906 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Three-dimensional ferroelectric memory device and method of making thereof73US 9,941,299 B1SanDisk Technologies LLC · 2018
- Three-dimensional ferroelectric memory devices53US 10,403,631 B1Wuxi Petabyte Technologies Co., Ltd. · 2019
- Method for forming a MFMIS memory device31US 11,171,157 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2021
- Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal nitride materials and method of making thereof28US 10,937,809 B1SanDisk Technologies LLC · 2021
- Three-dimensional ferroelectric random-access memory (FeRAM)21US 10,825,834 B12020