Memory device with word lines and contact landing

A system comprising:

• a memory device configured to store data, the memory device comprising:
• first layers including word lines interleaved respectively with first dielectric layers;
• at least one gate line structure penetrating through the first layers;
• second layers including second dielectric layers interleaved respectively with the first dielectric layers, wherein the second layers are sandwiched in the first layers;
• and
• word line pick-up structures each of which comprises a vertical contact extending through the second layers and an interconnect line connecting to the vertical contact, wherein each interconnect line extends from a closest gate line structure of the at least one gate line structure in a direction of and is in contact with a different one of the word lines, and wherein at least a portion of each of the word lines is at least partially circumscribed by high dielectric constant gate dielectric (high-k) material and the interconnect line is not circumscribed by the high-k material, and
• a memory controller that electrically connects to and controls the memory device.