Ferroelectric iii-nitride heterojunction devices
AssigneeThe Regents of the University of Michigan
InventorsDing Wang, Ping Wang, Zetian Mi
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Abstract
A device includes a substrate, a template layer supported by the substrate, a ferroelectric semiconductor layer adjacent to the template layer, the ferroelectric semiconductor layer including an alloy of a III-nitride material and a Group III-B element, and a dielectric layer disposed adjacent to the ferroelectric semiconductor layer and configured to establish a ferroelectric tunneling heterojunction with the ferroelectric semiconductor layer and the template layer. The ferroelectric semiconductor layer and the dielectric layer are configured such that the ferroelectric tunneling heterojunction exhibits a conductance level in accordance with a polarization of the ferroelectric semiconductor layer.
Claims20
A device comprising:
- a substrate;
- a template layer supported by the substrate;
- a ferroelectric semiconductor layer adjacent to the template layer, the ferroelectric semiconductor layer comprising an alloy of a III-nitride material and a Group III-B element;
- and
- a dielectric layer disposed adjacent to the ferroelectric semiconductor layer and configured to establish a ferroelectric tunneling heterojunction with the ferroelectric semiconductor layer and the template layer;
- wherein the ferroelectric semiconductor layer and the dielectric layer are configured such that the ferroelectric tunneling heterojunction exhibits a conductance level in accordance with a polarization of the ferroelectric semiconductor layer.
A method of fabricating a device, the method comprising:
- providing a substrate;
- forming a template layer supported by the substrate;
- implementing a non-sputtered, epitaxial growth procedure to form a ferroelectric semiconductor layer, the ferroelectric semiconductor layer being supported by, and in contact with, the template layer, the ferroelectric semiconductor layer comprising an alloy of a III-nitride material, the non-sputtered, epitaxial growth procedure being configured to incorporate a group IIIB element into the alloy of the III-nitride material;
- and
- controlling formation of a dielectric layer adjacent the ferroelectric semiconductor layer, the dielectric layer being disposed and configured to establish a ferroelectric tunneling heterojunction with the ferroelectric semiconductor layer and the template layer.
20-23. (canceled)
Dependencies are inferred from the claim text.