H10B 51/10
Ferroelectric ram [feram] devices comprising ferroelectric memory transistors: characterised by the top-view
Official title: characterised by the top-view layout
H10B51/10 (Ferroelectric ram [feram] devices comprising ferroelectric memory transistors: characterised by the top-view) appears on 395 US grants and 674 published applications in this corpus.
Search patents in H10B- Granted patents
- 395
- Published applications
- 674
- Assignees
- 56
- Inventors
- 545
- Latest grant
- 6 Oct 2026
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| Year | Granted patents | Published applications |
|---|---|---|
| 2010 | 0 | 2 |
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| 2013 | 2 | 1 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 1 |
| 2017 | 0 | 1 |
| 2018 | 2 | 8 |
| 2019 | 14 | 18 |
| 2020 | 14 | 17 |
| 2021 | 27 | 76 |
| 2022 | 45 | 106 |
| 2023 | 72 | 112 |
| 2024 | 77 | 147 |
| 2025 | 86 | 120 |
| 2026 | 55 | 65 |
By publication year. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Three-dimensional ferroelectric memory device and method of making thereof73US 9,941,299 B1SanDisk Technologies LLC · 2018
- Three-dimensional ferroelectric memory devices53US 10,403,631 B1Wuxi Petabyte Technologies Co., Ltd. · 2019
- Ferroelectric memory device containing word lines and pass gates and method of forming the same28US 10,868,042 B1SanDisk Technologies LLC · 2020
- Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal nitride materials and method of making thereof28US 10,937,809 B1SanDisk Technologies LLC · 2021
- Ferroelectric device film stacks with texturing layer, and method of forming such28US 11,659,714 B1Kepler Computing Inc. · 2023