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US 10,868,042 B1Granted
Ferroelectric memory device containing word lines and pass gates and method of forming the same
AssigneeSanDisk Technologies LLC
InventorsYanli Zhang, Johann Alsmeier
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Abstract
A memory device includes a semiconductor channel extending between a source region and a drain region, a plurality of pass gate electrodes, a plurality of word lines, a gate dielectric located between the semiconductor channel and the plurality of pass gate electrodes, and ferroelectric material portions located between the semiconductor channel and the plurality of word lines.
Claims20
A memory device, comprising:
- a semiconductor channel extending between a source region and a drain region;
- a plurality of pass gate electrodes;
- a plurality of word lines;
- a gate dielectric located between the semiconductor channel and the plurality of pass gate electrodes;
- and
- a stack of an interlayer dielectric layer and ferroelectric material portions located between the semiconductor channel and the plurality of word lines, wherein the interlayer dielectric layer and the gate dielectric have a same material composition and a same thickness.
3 more elements
Dependencies are inferred from the claim text.