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US 11,659,714 B1Granted
Ferroelectric device film stacks with texturing layer, and method of forming such
AssigneeKepler Computing Inc.
InventorsNiloy Mukherjee, Ramamoorthy Ramesh, Sasikanth Manipatruni, James Clarkson, FNU Atiquzzaman, Gabriel Antonio Paulius Velarde, Jason Y. Wu
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Abstract
Described are ferroelectric device film stacks which include a templating or texturing layer or material deposited below a ferroelectric layer, to enable a crystal lattice of the subsequently deposited ferroelectric layer to template off this templating layer and provide a large degree of preferential orientation despite the lack of epitaxial substrates.
Claims19
A ferroelectric device comprising:
- a first layer comprising ferroelectric material;
- a second layer over the first layer, the second layer comprising a metallic electrode;
- a third layer under the first layer, the third layer comprising a metallic electrode;
- and
- a fourth layer adjacent to the third layer, wherein the fourth layer is to induce crystallographic orientation in the first layer, and wherein the fourth layer comprises one of:
- FePt with a lattice constant of about 3.86 Angstroms;
- IrMn3 with a lattice constant of about 3.78 Angstroms;
- Sr2RuO4 with a lattice constant of about 3.84 Angstroms;
- or
- BiSrCaCuO with a lattice constant of about 3.83 Angstroms.
7 more elements
A method of forming a ferroelectric device comprising:
- fabricating a first layer comprising ferroelectric material;
- fabricating a second layer over the first layer, the second layer comprising a metallic electrode;
- fabricating a third layer under the first layer, the third layer comprising a metallic electrode;
- and
- fabricating a fourth layer adjacent to the third layer, wherein the fourth layer induces crystallographic orientation in the first layer, and wherein the fourth layer comprises one of:
- FePt with a lattice constant of about 3.86 Angstroms;
- IrMn3 with a lattice constant of about 3.78 Angstroms;
- Sr2RuO4 with a lattice constant of about 3.84 Angstroms;
- or
- BiSrCaCuO with a lattice constant of about 3.83 Angstroms.
7 more elements
A system comprising:
- a processor circuitry to execute one or more instructions;
- and
- a memory circuitry coupled to the processor circuitry, wherein the memory circuitry includes a ferroelectric device comprising:
- a first structure comprising ferroelectric material;
- a second structure over the first structure, the second structure comprising metallic electrode;
- a third structure under the first structure, the third structure comprising metallic electrode;
- a fourth structure adjacent to the third structure, wherein the fourth structure induces crystallographic orientation in the first structure;
- a fifth structure adjacent to the fourth structure, wherein the fifth structure comprises a barrier material that prevents oxygen and hydrogen diffusion;
- and
- a sixth structure adjacent to the second structure, wherein the sixth structure comprises a barrier material that prevents oxygen and hydrogen diffusion, and wherein the fourth structure comprises one of:
- FePt with a lattice constant of about 3.86 Angstroms;
- IrMn3 with a lattice constant of about 3.78 Angstroms;
- Sr2RuO4 with a lattice constant of about 3.84 Angstroms;
- or
- BiSrCaCuO with a lattice constant of about 3.83 Angstroms.
12 more elements
Dependencies are inferred from the claim text.