Semiconductor device and method of fabricating the same

A semiconductor device, comprising:

• a substrate that includes a cell region that extends in first and second directions that cross each other and includes a ferroelectric memory cell formed thereon, and an extension region that extends from the cell region in the first direction;
• a first conductive line that extends in the first direction on the substrate;
• a plurality of second conductive lines spaced apart from the first conductive line in the second direction and spaced apart from each other in the first direction;
• a ferroelectric layer disposed between one sidewall of the first conductive line and the plurality of second conductive lines and that extends in the first direction;
• a semiconductor layer disposed between the ferroelectric layer and the plurality of second conductive lines and that extends in the first direction;
• a first contact connected to the first conductive line on the first conductive line, and extending in a third direction that crosses the first and second directions;
• and
• an isolation plug disposed between the plurality of second conductive lines,
• wherein the first conductive line includes a plurality of first and second conductive patterns spaced apart from each other in the second direction, and a silicon material layer that extends in the first direction and is disposed between the first and second conductive patterns
• wherein the first conductive line in the extension region has first and second regions alternatively arranged in the first direction,
• wherein the first contact is connected to the first region, and
• wherein the silicon material layer is disposed in the second region,
• wherein the first conductive line has a stepwise shape in the extension region,
• wherein the first contact is not formed in the second region,
• wherein a width in the second direction of the first region is less than that of the second region,
• and wherein the silicon material layer is not disposed in the first region.

A method of fabricating a semiconductor device, the method comprising:

• forming a stacked structure on a substrate, wherein the stacked structure includes an insulating layer and a sacrificial layer that are alternately stacked, and the substrate includes a cell region and an extension region;
• forming first and second trenches that penetrate through at least a portion of the stacked structure and are spaced apart from each other in a first direction, and a third trench between the first and second trenches;
• forming a sacrificial pattern that has a smaller width than the sacrificial layer by partially removing the sacrificial layer;
• forming a first conductive line that includes first and second conductive patterns that are spaced apart from each other on both sidewalls of the sacrificial pattern;
• respectively forming a ferroelectric layer, a semiconductor layer and a first dielectric layer in the first to third trenches;
• forming an opening that passes through the first dielectric layer and the semiconductor layer in the third trench;
• forming a second dielectric layer within the opening;
• forming a plurality of second conductive layers by respectively removing the first dielectric layers from the first and second trenches;
• and
• forming a first contact, on the first conductive line in the extension region,
• wherein the first conductive line in the extension region has first and second regions alternatively arranged in a second direction that crosses the first direction,
• wherein the first contact is disposed in the first region, and
• wherein the sacrificial pattern is disposed in the second region,
• wherein the first contact is not formed in the second region, and
• wherein more of the sacrificial layer is removed from the first region than from the second region.