US 2026/0293149 A1 · METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING DATA STORAGE LAYER AND DATA STORAGE PATTERNS

Abstract

The present disclosure provides methods, apparatuses, and systems for operating and manufacturing a semiconductor device. In some embodiments, a semiconductor device includes a stack structure including interlayer insulating layers and gate electrodes, a channel layer disposed inside a hole penetrating through the stack structure, a data storage layer disposed between the stack structure and the channel layer, data storage patterns disposed between the data storage layer and the gate electrodes, and dielectric layers disposed between the data storage patterns and the gate electrodes. The interlayer insulating layers and the gate electrodes are alternately and repeatedly stacked in a first direction. A first material of the data storage layer is different from a second material of the data storage patterns.

Claims20

Dependent claims

A method of manufacturing a semiconductor device, the method comprising:

forming a structure including interlayer insulating layers and sacrificial layers alternately and repeatedly stacked in a vertical direction;
forming a hole penetrating the structure and exposing the interlayer insulating layers and the sacrificial layers;
partially etching the sacrificial layers exposed by the hole to form expanded openings;
forming data storage patterns in the expanded openings;
forming a data storage layer in the hole, the data storage layer covering the data storage patterns and the interlayer insulating layers exposed by the hole;
forming a channel layer in the hole, the channel layer covering the data storage layer;
and
forming an insulating core pattern in the hole,
wherein the channel layer is between the data storage layer and the insulating core pattern.

6 more elements

A method of manufacturing a semiconductor device, the method comprising:

forming a structure including interlayer insulating layers and sacrificial layers alternately and repeatedly stacked in a vertical direction;
forming a hole penetrating the structure and exposing the interlayer insulating layers and the sacrificial layers;
partially etching the sacrificial layers exposed by the hole to form expanded openings;
forming data storage patterns in the expanded openings;
and
forming a vertical structure in the hole,
wherein the data storage patterns are disposed on a side surface of the vertical structure and are spaced apart from each other in the vertical direction,
wherein the vertical structure includes:
an insulating core pattern;
a channel layer on a side surface of the insulating core pattern;
a data storage layer on an outer side surface of the channel layer;
and
a pad pattern on the insulating core pattern,
wherein the data storage layer covers the data storage patterns and the interlayer insulating layers exposed by the hole,
wherein each of the data storage patterns has a first side surface adjacent to the vertical structure and a second side surface opposite to the first side surface,
wherein an upper end of the data storage layer and an upper end of the channel layer are disposed at a higher level than an uppermost data storage pattern among the data storage patterns,
wherein a lower end of the data storage layer and a lower end of the channel layer are disposed at a lower level than a lowermost data storage pattern among the data storage patterns, and
wherein a material of the data storage layer is different from a material of the data storage patterns.

15 more elements

Dependencies are inferred from the claim text.

Method of manufacturing semiconductor device including data storage layer and data storage patterns

Life of this patent

Method of manufacturing semiconductor device including data storage layer and data storage patterns

Life of this patent

Abstract

Claims20