Semiconductor device

A semiconductor device comprising:

• first conductive lines on a substrate and spaced apart from each other in a first direction, the first direction being perpendicular to an upper surface of the substrate;
• second conductive lines spaced apart from the first conductive lines in a second direction, the second direction being parallel to the upper surface of the substrate;
• a gate electrode between the first conductive lines and the second conductive lines, the gate electrode extending in the first direction;
• a first selection gate electrode between the first conductive lines and the gate electrode, the first selection gate electrode extending in the first direction;
• a plurality of channel patterns surrounding a side surface of the gate electrode, the plurality of channel patterns being spaced apart from each other in the first direction;
• a plurality of first selection channel patterns surrounding a side surface of the first selection gate electrode, and spaced apart from each other in the first direction, the plurality of first selection channel patterns connected to the plurality of channel patterns, respectively;
• and
• a ferroelectric pattern between the gate electrode and each of the plurality of channel patterns, wherein
• the first conductive lines are electrically connected to the plurality of first selection channel patterns, respectively, and each of the plurality of channel patterns is electrically connected to a corresponding second conductive line among the second conductive lines.