Memory cell with offset interconnect via
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFu-Chen Chang, Tzu-Yu Chen, Sheng-Hung Shih, Kuo-Chi Tu, Wen-Ting Chu, Chih-Hsiang Chang
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFu-Chen Chang, Tzu-Yu Chen, Sheng-Hung Shih, Kuo-Chi Tu, Wen-Ting Chu, Chih-Hsiang Chang
Estimating the term…
The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a lower insulating structure disposed over a lower dielectric structure surrounding an interconnect. The lower insulating structure includes sidewalls extending through the lower insulating structure. A bottom electrode is arranged along the sidewalls and an upper surface of the lower insulating structure. A data storage structure is disposed on first interior sidewalls and an upper surface of the bottom electrode. A top electrode is disposed on second interior sidewalls and an upper surface of the data storage structure. An interconnect via is disposed on an upper surface of the top electrode. A bottom surface of the bottom electrode is laterally outside of a bottom surface of the interconnect via.
An integrated chip, comprising:
An integrated chip, comprising:
An integrated chip, comprising:
Dependencies are inferred from the claim text.