H10B 51/30
Ferroelectric ram [feram] devices comprising ferroelectric memory transistors: characterised by the memory
Official title: characterised by the memory core region
H10B51/30 (Ferroelectric ram [feram] devices comprising ferroelectric memory transistors: characterised by the memory) appears on 1,057 US grants and 1,563 published applications in this corpus.
Search patents in H10B- Granted patents
- 1,057
- Published applications
- 1,563
- Assignees
- 181
- Inventors
- 1,458
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 3 | 0 |
| 1998 | 3 | 0 |
| 1999 | 5 | 0 |
| 2000 | 12 | 0 |
| 2001 | 5 | 3 |
| 2002 | 6 | 12 |
| 2003 | 10 | 13 |
| 2004 | 13 | 15 |
| 2005 | 14 | 19 |
| 2006 | 10 | 8 |
| 2007 | 8 | 17 |
| 2008 | 4 | 7 |
| 2009 | 6 | 10 |
| 2010 | 11 | 8 |
| 2011 | 7 | 10 |
| 2012 | 9 | 4 |
| 2013 | 5 | 3 |
| 2014 | 5 | 8 |
| 2015 | 4 | 8 |
| 2016 | 8 | 25 |
| 2017 | 21 | 27 |
| 2018 | 25 | 43 |
| 2019 | 42 | 62 |
| 2020 | 52 | 84 |
| 2021 | 83 | 151 |
| 2022 | 111 | 216 |
| 2023 | 142 | 233 |
| 2024 | 168 | 239 |
| 2025 | 162 | 205 |
| 2026 | 100 | 133 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Spacer film scheme form polarization improvement8 Oct 2026US 2026/0311724 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ternary content-addressable memory cells and methods for forming the same8 Oct 2026US 2026/0311760 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including ferroelectric material film and method for fabricating a semiconductor device8 Oct 2026US 2026/0313906 A1Samsung Electronics Co., Ltd.
- Semiconductor memory device8 Oct 2026US 2026/0313907 A1Samsung Electronics Co., Ltd.
- Multi-channel ferroelectric memory structure8 Oct 2026US 2026/0313908 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same285US 7,233,522 B2SanDisk 3D LLC · 2007
- Floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers106US 6,858,906 B2Samsung Electronics Co., Ltd. · 2005
- Method for forming metal-containing films using metal complexes with chelating O- and/or N-donor ligands101US 6,225,237 B1Micron Technology, Inc. · 2001
- Ferroelectric memory cell for an integrated circuit91US 10,600,808 B2NaMLab gGmbH · 2020
- Multilevel ferroelectric memory cell for an integrated circuit91US 9,830,969 B2NaMLab gGmbH · 2017