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US 6,225,237 B1Granted
Method for forming metal-containing films using metal complexes with chelating O- and/or N-donor ligands
AssigneeMicron Technology, Inc.
InventorBrian A. Vaartstra
Life of this patent
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Abstract
A method of forming a film on a substrate using one or more complexes containing one or more chelating O- and/or N-donor ligands. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
Claims19
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a precursor composition comprising one or more complexes of the formula:
- wherein:
- M is a transition metal, main group metal, or lanthanide;
- each Y group is independently O or N—R3;
- L is a neutral or anionic supporting ligand;
- each R group is independently H, or an organic group;
- x=0 to 6;
- n+ is the oxidation state of the metal;
- y=n if L is neutral, y=n−x if L is monoanionic, or y=n−2x if L is dianionic;
- and
- forming a metal-containing film from the precursor composition on a surface of the semiconductor substrate or substrate assembly.
9 more elements
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a precursor composition comprising one or more organic solvents and one or more complexes of the formula:
- wherein:
- M is a transition metal, main group metal, or lanthanide;
- each Y group is independently O or N—R3;
- L is a neutral or anionic supporting ligand;
- each R group is independently H, or an organic group;
- x=0 to 6;
- n+ is the oxidation state of the metal;
- y=n if L is neutral, y=n−x if L is monoanionic, or y=n−2x if L is dianionic;
- and
- vaporizing the precursor composition to form vaporized precursor composition;
- and
- directing the vaporized precursor composition toward the semiconductor substrate or substrate assembly to form a metal-containing film on a surface of the semiconductor substrate or substrate assembly.
11 more elements
A method of forming a film on a substrate, the method comprising:
- providing a substrate;
- providing a precursor composition comprising one or more complexes of the formula:
- wherein:
- M is a transition metal, main group metal, or lanthanide;
- each Y group is independently O or N—R3;
- L is a neutral or anionic supporting ligand;
- each R group is independently H, or an organic group;
- x=0 to 6;
- n+ is the oxidation state of the metal;
- y=n if L is neutral, y=n−x if L is monoanionic, or y=n−2x if L is dianionic;
- and
- forming a metal-containing film from the precursor composition on a surface of the substrate.
9 more elements
A method of forming a film on a substrate, the method comprising:
- providing a substrate;
- providing a precursor composition comprising one or more solvents and one or more complexes of the formula:
- wherein:
- M is a transition metal, a main group metal, or a lanthanide;
- each Y group is independently O or N—R3;
- L is a neutral or anionic supporting ligand;
- each R group is independently H, or an organic group;
- x=0 to 6;
- n+ is the oxidation state of the metal;
- y=n if L is neutral, y =n−x if L is monoanionic, or y=n−2x if L is dianionic;
- and
- vaporizing the precursor composition to form vaporized precursor composition;
- and
- directing the vaporized precursor composition toward the substrate to form a metal-containing film on a surface of the substrate.
11 more elements
Dependencies are inferred from the claim text.