Semiconductor device and method for manufacturing the same, and electronic system including semiconductor device

An electron system comprising:

• a main substrate;
• a semiconductor device on the main substrate;
• and
• a controller electrically connected to the semiconductor device on the main substrate,
• wherein the semiconductor device includes:
• a peripheral circuit region,
• a cell region including an input/output connection wire electrically connected to the peripheral circuit region, and
• an input/output pad electrically connected to the input/output connection wire extending in the cell region,
• wherein the cell region includes:
• a substrate including a first horizontal conductive layer,
• a gate stacking structure including a plurality of interlayer insulating layers and a plurality of gate electrodes alternately stacked on the substrate,
• a channel structure extending through the gate stacking structure in a first direction that intersects the substrate in the cell region, and including a channel layer connected to the substrate, and a ferroelectric layer surrounding the channel layer, and
• a dummy pattern positioned on the first horizontal conductive layer and disposed between the substrate and the ferroelectric layer.

A manufacturing method of a semiconductor device comprising:

• stacking a horizontal insulation layer on a second horizontal conductive layer and a third horizontal conductive layer on the horizontal insulation layer,
• forming a dummy hole by patterning the third horizontal conductive layer so that an upper surface of the horizontal insulation layer is exposed,
• forming a dummy pattern within the dummy hole,
• forming a stacking structure by sequentially repeating an interlayer insulating layer and a sacrificial insulation layer on the third horizontal conductive layer and the dummy pattern,
• forming a channel structure extending through the stacking structure, the dummy pattern, and the horizontal insulation layer,
• removing the horizontal insulation layer to create a first removed space,
• forming a first horizontal conductive layer within the first removed space,
• removing the sacrificial insulation layer to create a second removed space, and
• forming a gate electrode within the second removed space.