H10B 51/40
Ferroelectric ram [feram] devices comprising ferroelectric memory transistors: characterised by the peripheral
Official title: characterised by the peripheral circuit region
H10B51/40 (Ferroelectric ram [feram] devices comprising ferroelectric memory transistors: characterised by the peripheral) appears on 200 US grants and 266 published applications in this corpus.
Search patents in H10B- Granted patents
- 200
- Published applications
- 266
- Assignees
- 39
- Inventors
- 364
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 0 | 1 |
| 2003 | 0 | 0 |
| 2004 | 1 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 3 |
| 2010 | 0 | 2 |
| 2011 | 3 | 2 |
| 2012 | 2 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 2 | 5 |
| 2017 | 3 | 2 |
| 2018 | 2 | 1 |
| 2019 | 3 | 11 |
| 2020 | 10 | 22 |
| 2021 | 23 | 34 |
| 2022 | 18 | 38 |
| 2023 | 36 | 46 |
| 2024 | 37 | 44 |
| 2025 | 34 | 31 |
| 2026 | 26 | 24 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- 3D synapse device stack, 3D stackable synapse array using the 3D synapse device stacks and method of fabricating the stack29 Sep 2026US 12,751,008 B2Seoul National University R&Db Foundation
- Semiconductor device and method for manufacturing the same, and electronic system including semiconductor device29 Sep 2026US 12,751,015 B2Samsung Electronics Co., Ltd.
- Three-dimensional ferroelectric semiconductor memory device8 Sep 2026US 12,733,176 B2Samsung Electronics Co., Ltd.
- Non-volatile memory array with integrated memory and access transistors and method of making the same1 Sep 2026US 12,725,639 B2SanDisk Technologies LLC
- Method of fabricating a memory device by wafer bonding25 Aug 2026US 12,720,757 B1Kepler Computing Inc.
- Semiconductor device including ferroelectric material film and method for fabricating a semiconductor device8 Oct 2026US 2026/0313906 A1Samsung Electronics Co., Ltd.
- Memory device, operating method thereof, and memory system24 Sep 2026US 2026/0290420 A1Yangtze Memory Technologies Co., Ltd.
- Semiconductor device and electronic system including the same24 Sep 2026US 2026/0293148 A1Samsung Electronics Co., Ltd.
- Method of manufacturing semiconductor device including data storage layer and data storage patterns24 Sep 2026US 2026/0293149 A1Samsung Electronics Co., Ltd.
- Semiconductor device and electronic device17 Sep 2026US 2026/0282379 A1Semiconductor Energy Laboratory Co.Ltd.
Most cited
By later US patents
- Three-dimensional ferroelectric memory device and method of making thereof73US 9,941,299 B1SanDisk Technologies LLC · 2018
- Method for forming a MFMIS memory device31US 11,171,157 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2021
- 3D stack of accelerator die and multi-core processor die31US 11,694,940 B1Kepler Computing Inc. · 2023
- Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal nitride materials and method of making thereof28US 10,937,809 B1SanDisk Technologies LLC · 2021
- Ferroelectric device film stacks with texturing layer, and method of forming such28US 11,659,714 B1Kepler Computing Inc. · 2023