H10B 51/20
Ferroelectric ram [feram] devices comprising ferroelectric memory transistors: characterised by the three-dimensional
Official title: characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
H10B51/20 (Ferroelectric ram [feram] devices comprising ferroelectric memory transistors: characterised by the three-dimensional) appears on 723 US grants and 1,182 published applications in this corpus.
Search patents in H10B- Granted patents
- 723
- Published applications
- 1,182
- Assignees
- 92
- Inventors
- 1,038
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 1 |
| 2007 | 0 | 1 |
| 2008 | 0 | 0 |
| 2009 | 1 | 1 |
| 2010 | 1 | 4 |
| 2011 | 1 | 2 |
| 2012 | 0 | 0 |
| 2013 | 1 | 1 |
| 2014 | 1 | 2 |
| 2015 | 1 | 5 |
| 2016 | 5 | 10 |
| 2017 | 11 | 11 |
| 2018 | 12 | 20 |
| 2019 | 28 | 29 |
| 2020 | 31 | 57 |
| 2021 | 49 | 110 |
| 2022 | 86 | 180 |
| 2023 | 114 | 203 |
| 2024 | 140 | 228 |
| 2025 | 143 | 197 |
| 2026 | 97 | 120 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- 3D synapse device stack, 3D stackable synapse array using the 3D synapse device stacks and method of fabricating the stack29 Sep 2026US 12,751,008 B2Seoul National University R&Db Foundation
- Semiconductor device and method for manufacturing the same, and electronic system including semiconductor device29 Sep 2026US 12,751,015 B2Samsung Electronics Co., Ltd.
- 3D cell and array structures22 Sep 2026US 12,744,086 B2NEO Semiconductor, Inc.
- Fabrication Method for a Memory Structure Including High Density Three-Dimensional NOR Memory Strings of Junctionless Ferroelectric Storage Transistors8 Oct 2026US 2026/0311761 A1Sunrise Memory Corporation
- Semiconductor device including ferroelectric material film and method for fabricating a semiconductor device8 Oct 2026US 2026/0313906 A1Samsung Electronics Co., Ltd.
- Semiconductor memory device8 Oct 2026US 2026/0313907 A1Samsung Electronics Co., Ltd.
- Semiconductor device with content addressable memory units1 Oct 2026US 2026/0301811 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ferroelectric memory device1 Oct 2026US 2026/0304778 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Three-dimensional ferroelectric memory device and method of making thereof73US 9,941,299 B1SanDisk Technologies LLC · 2018
- Apparatuses having a ferroelectric field-effect transistor memory array and related method71US 9,281,044 B2Micron Technology, Inc. · 2016
- Three-dimensional (3D) ferroelectric dipole metal-oxide semiconductor ferroelectric field-effect transistor (MOSFeFET) system, and related methods and systems54US 9,875,784 B1QUALCOMM Incorporated · 2018
- Three-dimensional ferroelectric memory devices53US 10,403,631 B1Wuxi Petabyte Technologies Co., Ltd. · 2019
- Three-level ferroelectric memory cell using band alignment engineering40US 10,038,092 B1SanDisk Technologies LLC · 2018