Three-dimensional (3D) ferroelectric dipole metal-oxide semiconductor ferroelectric field-effect transistor (MOSFeFET) system, and related methods and systems

A memory system, comprising:

• a means for forming a high-density ferroelectric dipole metal-oxide semiconductor ferroelectric field-effect transistor (MOSFeFET) system, comprising:
• a bottom dielectric layer disposed above a substrate;
• at least one source line;
• a gate layer disposed above the bottom dielectric layer;
• a top dielectric layer disposed above the gate layer;
• at least one bit line disposed such that the bottom dielectric layer, the gate layer, and the top dielectric layer are between the at least one source line and the at least one bit line;
• at least one interconnect extending between the bottom dielectric layer and the top dielectric layer electrically interconnecting the at least one source line with the at least one bit line;
• and
• at least one ferroelectric dipole MOSFeFET formed at an intersection area of the at least one interconnect and the gate layer.

A method for fabricating a three-dimensional (3D) ferroelectric dipole metal-oxide semiconductor ferroelectric field-effect transistor (MOSFeFET) system, comprising:

• providing a bottom dielectric layer above a substrate;
• disposing at least one source line;
• disposing a gate layer above the bottom dielectric layer;
• disposing a top dielectric layer above the gate layer;
• disposing at least one bit line such that the bottom dielectric layer, the gate layer, and the top dielectric layer are between the at least one source line and the at least one bit line;
• disposing at least one interconnect extending between the bottom dielectric layer and the top dielectric layer electrically interconnecting the at least one source line with the at least one bit line;
• and
• forming at least one ferroelectric dipole MOSFeFET at an intersection area of the at least one interconnect and the gate layer.