H10B 61/00
Magnetic memory devices
Official title: Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
H10B61/00 (Magnetic memory devices) appears on 6,951 US grants and 8,063 published applications in this corpus.
Search patents in H10B- Granted patents
- 6,951
- Published applications
- 8,063
- Assignees
- 593
- Inventors
- 5,682
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 2 | 0 |
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 4 | 0 |
| 1988 | 2 | 0 |
| 1989 | 3 | 0 |
| 1990 | 1 | 0 |
| 1991 | 4 | 0 |
| 1992 | 3 | 0 |
| 1993 | 3 | 0 |
| 1994 | 2 | 0 |
| 1995 | 3 | 0 |
| 1996 | 7 | 0 |
| 1997 | 6 | 0 |
| 1998 | 7 | 0 |
| 1999 | 17 | 0 |
| 2000 | 14 | 0 |
| 2001 | 23 | 19 |
| 2002 | 49 | 95 |
| 2003 | 90 | 96 |
| 2004 | 138 | 187 |
| 2005 | 144 | 198 |
| 2006 | 133 | 152 |
| 2007 | 111 | 127 |
| 2008 | 88 | 127 |
| 2009 | 103 | 163 |
| 2010 | 119 | 163 |
| 2011 | 129 | 167 |
| 2012 | 170 | 243 |
| 2013 | 195 | 238 |
| 2014 | 283 | 311 |
| 2015 | 287 | 313 |
| 2016 | 362 | 386 |
| 2017 | 381 | 397 |
| 2018 | 351 | 417 |
| 2019 | 530 | 589 |
| 2020 | 567 | 716 |
| 2021 | 538 | 615 |
| 2022 | 450 | 555 |
| 2023 | 422 | 585 |
| 2024 | 458 | 470 |
| 2025 | 484 | 442 |
| 2026 | 260 | 292 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Fe-x templating layers for growth of perpendicularly magnetized Heusler films on top of a tunnel barrier6 Oct 2026US 12,755,770 B2Samsung Electronics Co., Ltd.
- Semiconductor device6 Oct 2026US 12,757,409 B2Samsung Electronics Co., Ltd.
- Seed layer for enhancing tunnel magnetoresistance with perpendicularly magnetized Heusler films6 Oct 2026US 12,757,639 B2International Business Machines Corporation
- Nitride seed layer with high thermal stability for growth of perpendicularly magnetized Heusler films6 Oct 2026US 12,757,640 B2Samsung Electronics Co., Ltd.
- Shielding for reducing electromagnetic interference and magnetic interference and methods for forming the same6 Oct 2026US 12,757,737 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Multi-level memristor elements8 Oct 2026US 2026/0313913 A1Cirrus Logic International Semiconductor Ltd.
- Three dimensional semiconductor device with memory stack8 Oct 2026US 2026/0313917 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Raised source/drain oxide semiconducting thin film transistor and methods of making the same8 Oct 2026US 2026/0313959 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetic tunnel junctions and methods of forming the same8 Oct 2026US 2026/0314266 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetic random access memory with free layer8 Oct 2026US 2026/0314267 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Magnetic memory array using magnetic tunnel junction devices in the memory cells768US 5,640,343 AInternational Business Machines Corporation · 1997
- Method for making a three-dimensional integrated circuit structure481US 7,052,941 B22006
- Alignment of MTJ stack to conductive lines in the absence of topography273US 7,223,612 B2Infineon Technologies AG · 2007
- Three-terminal magnetostatically coupled spin transfer-based MRAM cell269US 7,009,877 B1Grandis, Inc. · 2006
- Method of manufacturing a magnetoresistive-based device248US 8,747,680 B1Everspin Technologies, Inc. · 2014