H10B 61/20
Comprising components having three or more electrodes
Official title: {comprising components having three or more electrodes, e.g. transistors}
H10B61/20 (Comprising components having three or more electrodes) appears on 3,805 US grants and 4,536 published applications in this corpus.
Search patents in H10B- Granted patents
- 3,805
- Published applications
- 4,536
- Assignees
- 332
- Inventors
- 3,415
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 5 | 0 |
| 2000 | 9 | 0 |
| 2001 | 12 | 5 |
| 2002 | 17 | 45 |
| 2003 | 36 | 41 |
| 2004 | 52 | 99 |
| 2005 | 83 | 112 |
| 2006 | 79 | 88 |
| 2007 | 61 | 83 |
| 2008 | 51 | 86 |
| 2009 | 63 | 90 |
| 2010 | 75 | 123 |
| 2011 | 96 | 113 |
| 2012 | 110 | 165 |
| 2013 | 135 | 163 |
| 2014 | 180 | 206 |
| 2015 | 188 | 212 |
| 2016 | 213 | 240 |
| 2017 | 227 | 232 |
| 2018 | 197 | 217 |
| 2019 | 290 | 346 |
| 2020 | 301 | 357 |
| 2021 | 266 | 292 |
| 2022 | 218 | 275 |
| 2023 | 212 | 296 |
| 2024 | 234 | 254 |
| 2025 | 263 | 242 |
| 2026 | 130 | 154 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Multilevel antiferromagnetic memory device29 Sep 2026US 12,749,519 B2Kioxia Corporation
- Semiconductor device including two-dimensional material and method of manufacturing the same29 Sep 2026US 12,751,046 B2Samsung Electronics Co., Ltd.
- MRAM device with tunnel barrier overhang29 Sep 2026US 12,751,211 B2International Business Machines Corporation
- Magnetic memory device having magnetic tunnel junction patterns and spin-orbit torque lines22 Sep 2026US 12,744,068 B2Samsung Electronics Co., Ltd.
- 3D cell and array structures22 Sep 2026US 12,744,086 B2NEO Semiconductor, Inc.
- Three dimensional semiconductor device with memory stack8 Oct 2026US 2026/0313917 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Raised source/drain oxide semiconducting thin film transistor and methods of making the same8 Oct 2026US 2026/0313959 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetic tunnel junctions and methods of forming the same8 Oct 2026US 2026/0314266 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetic random access memory with free layer8 Oct 2026US 2026/0314267 A1Samsung Electronics Co., Ltd.
- Magnetoresistance effect element and magnetic memory1 Oct 2026US 2026/0304783 A1TDK Corporation
Most cited
By later US patents
- Method for making a three-dimensional integrated circuit structure481US 7,052,941 B22006
- Three-terminal magnetostatically coupled spin transfer-based MRAM cell269US 7,009,877 B1Grandis, Inc. · 2006
- Magnetic spin polarization and magnetization rotation device with memory and writing process, using such a device243US 6,532,164 B2Commissariat A L' Energie Atomique · 2003
- MTJ MRAM series-parallel architecture242US 6,331,943 B1Motorola, Inc. · 2001
- Non-volatile memory devices including stacked NAND-type resistive memory cell strings and methods of fabricating the same235US 7,843,718 B2Samsung Electronics Co., Ltd. · 2010