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US 2026/0314267 A1Published application
Magnetic random access memory with free layer
AssigneeSamsung Electronics Co., Ltd.
InventorsRoman CHEPULSKYY, Dmytro APALKOV, Jaewoo JEONG, FNU IKHTIAR
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Abstract
A magnetic random access memory (MRAM) is provided. The MRAM includes: a substrate, wherein the substrate includes an alkaline earth oxide; and a free layer disposed on the substrate, wherein the free layer includes an Mn-based compound or alloy.
Claims19
A magnetic random access memory (MRAM) comprising:
- a substrate, wherein the substrate includes an alkaline earth oxide;
- and
- a free layer disposed on the substrate, wherein the free layer includes an Mn-based compound or alloy.
A system comprising:
- a magnetic random access memory (MRAM) including:
- a first tunneling barrier layer, wherein the first tunneling barrier layer includes an alkaline earth oxide;
- and
- a free layer disposed on the first tunneling barrier layer, wherein the free layer includes an Mn-based compound or alloy.
1 more element
A method of fabricating a magnetic random access memory (MRAM) comprising:
- forming an oxide layer;
- forming a free layer on the oxide layer, wherein the free layer includes an Mn-based compound or alloy;
- and
- forming a tunneling barrier layer on the free layer, wherein at least one of the oxide layer or the tunneling barrier layer includes an alkaline earth oxide.
1 more element
Dependencies are inferred from the claim text.