Magnetic tunnel junctions and methods of forming the same

A semiconductor structure, comprising:

• a plurality of dielectric layers and a plurality of etch stop layers (ESLs) formed over a semiconductor substrate,
• wherein the plurality of dielectric layers and the plurality of ESLs are formed in an alternating arrangement along a direction perpendicular to the semiconductor substrate;
• and
• a memory structure comprising:
• a magnetic tunnel junction (MTJ) structure disposed in a first dielectric layer of the plurality of dielectric layers;
• and
• a top electrode over the MTJ structure,
• wherein a first portion of the top electrode is in the first dielectric layer,
• wherein a second portion of the top electrode is in a second dielectric layer of the plurality of dielectric layers, and
• wherein the second dielectric layer is disposed over the first dielectric layer.

A semiconductor structure, comprising:

• a plurality of dielectric layers and a plurality of etch stop layers (ESLs) formed over a semiconductor substrate,
• wherein the plurality of dielectric layers and the plurality of ESLs are formed in an alternating arrangement along a direction perpendicular to the semiconductor substrate;
• and
• a memory structure comprising:
• a magnetic tunnel junction (MTJ) structure disposed in a dielectric layer of the plurality of dielectric layers;
• a top electrode over the MTJ structure;
• wherein a portion of the top electrode is in the dielectric layer;
• and
• a bottom electrode under the MTJ structure,
• wherein the bottom electrode is disposed in an etch stop layer (ESL) of the plurality of ESLs that is disposed under the dielectric layer.