Three-terminal magnetostatically coupled spin transfer-based MRAM cell

An array of magnetic memory devices for reading and writing data states, comprising:

• a plurality of word lines;
• a plurality of bit lines;
• and
• a plurality of magnetic memory elements, each magnetic memory element comprising:
• at least three terminals including first, second, and third terminals;
• a spin transfer (ST) driven element including a first free layer, the ST driven element disposed between the first terminal and the second terminal;
• a readout element including a second free layer and an insulating barrier layer, the readout element disposed between the second terminal and the third terminal;
• and
• at least one isolation circuitry configured to select a desired magnetic memory element within the array, and to isolate the insulating barrier layer during a write operation,
• wherein the readout element, the word line, and the bit line cooperate to enable a magnetization direction of the second free layer in the readout element to indicate a data state, and
• wherein the ST driven element, the word line, and the bit line cooperate to enable a magnetization reversal of the first free layer within the ST driven element magnetostatically causing a magnetization reversal of the second free layer in the readout element thereby recording a data state.

A method for reading and writing a data state fro a magnetic memory device, comprising:

• providing at least three terminals including first, second, and third terminals;
• providing a spin transfer (ST) driven element including a first free layer, the ST driven element disposed between the first terminal and the second terminal;
• providing a readout element including a second free layer, the readout element disposed between the second terminal and the third terminal;
• reversing a magnetization direction of the first free layer within the ST driven element, and magnetostatically causing a magnetization reversal of the second free layer in the readout element to record a data state;
• and
• indicating a data state by detecting a magnetization direction of the second free layer in the readout element.

A method for reading and writing data states for an array of magnetic memory elements, comprising:

• providing a plurality of word lines;
• providing a plurality of bit lines;
• providing a plurality of magnetic memory elements, each magnetic memory element comprising:
• at least three terminals including first, second, and third terminals;
• a spin transfer (ST) driven element including a first free layer, the ST driven element disposed between the first terminal and the second terminal;
• a readout element including a second free layer and an insulating barrier layer, the readout element disposed between the second terminal and the third terminal;
• and
• at least one isolation circuitry configured to select a desired magnetic memory element within the array, and to isolate the insulating barrier layer during a write operation;
• reversing a magnetization direction of the first free layer within the ST driven element, and magnetostatically causing a magnetization reversal of the second free layer in the readout element to record a data state;
• and
• indicating a data state by detecting a magnetization direction for the second free layer in the readout element.